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Part Number: M29W017D
Description: The M29W017D is a 16 Mbit (2Mb x8) non-volatile memory that can be read, erased and reprogrammed. Thes...


Description: The M29W017D is a 16 Mbit (2Mb x8) non-volatile memory that can be read, erased and reprogrammed. Thes...
The M29W017D is a 16 Mbit (2Mb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
The memory is divided into 32 blocks of 64KBytes (see Table 16, Block Addresses) that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors,
The memory is offered in TSOP40 (10 x 20mm) and TFBGA48 (0.8mm pitch) packages. The memory is supplied with all the bits erased (set to '1').
| Symbol | Parameter | Min | Max | Unit |
| TBIAS | Temperature Under Bias | 50 | 125 | |
| TSTG | Storage Temperature | 65 | 150 | |
| VIO | Input or Output Voltage (1,2) | 0.6 | VCC +0.6 | V |
| VCC | Supply Voltage | 0.6 | 4 | V |
| VID | Identification Voltage | 0.6 | 13.5 | V |
M29W017D
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