MFG:Other Category:Other
Category: Other
MFG: Other
Description: The M29W128GL-70N6E is designed as one kind of 128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply flash me...
The M29W128GL-70N6E is designed as one kind of 128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply flash memory device that is divided into 64-Kword/128-Kbyte uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
Features of the M29W128GL-70N6E are:(1)supply voltage: Vcc = 2.7 V to 3.6 V for program, erase and read;(2)access times: 70, 90 ns;(3)programming time 10s per byte / word typical;(4)35 memory blocks: 1 boot block (top or bottom location) and 2 parameter and 32 main blocks;(5)program / erase controller - embedded byte / word program algorithms;(6)erase suspend and resume modes - read and program another block during erase suspend;(7)unlock bypass program command - faster production / batch programming;(8)temporary block unprotection mode;(9)low power consumption - standby and automatic standby;(10)100,000 program / erase cycles per block.
The absolute maximum ratings of the M29W128GL-70N6E can be summarized as:(1)Temperature Under Bias: -50 to 125 °C;(2)Storage Temperature: -65 to 150 °C;(3)Input or Output Voltage: -0.6 to Vcc+0.6 V;(4)Supply Voltage: -0.6 to 4 V;(5)Identification Voltage: -0.6 to 13.5 V. If you want to know more information such as the electrical characteristics about the M29W128GL-70N6E, please download the datasheet in www.seekic.com or www.chinaicmart.com.
M2901V
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IC FLSH 128MB 3V 70NS FBP 56TSOP
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