Position: Home > Datasheet list > M29 Series > Index M > M29W128GL
Electronica China

Purchase M29W128GL, In-stock M29W128GL From SeekIC.

 

M29W128GL Product Image

M29 Series Datasheet download

Five Points

Part Number: M29W128GL

 

 

 

 

Description: The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can...


Urgent Purchase

M29W128GL General Description


The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode.

The memory array is divided into 64-Kword/128-Kbyte uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the command interface of the memory. An on-chip Program/Erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.

The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic.

The M29W128GH and M29W128GL support Asynchronous Random Read and Page Read from all blocks of the memory array. The devices also feature a Write to Buffer Program capability that improves the programming throughput by programming in one shot a buffer of 32 words/64 bytes. The Enhanced Buffered Program feature is also available to speed up the programming throughput, allowing to program 256 words in one shot (only in x 16 mode). The VPP/WP signal can be used to enable faster programming of the device.

The M29W128GH and M29W128GL have an extra block, the extended block, of 128 words in x 16 mode or of 256 bytes in x 8 mode that can be accessed using a dedicated command.

The extended block can be protected and so is useful for storing security information.

However the protection is not reversible, once protected the protection cannot be undone.

The device features different levels of hardware and software block protection to avoid unwanted program or erase (modify):
Hardware protection:
The VPP/WP provides a hardware protection of the highest and lowest block on the M29W128GH, M29W128GL, respectively.
Software protection:
Volatile protection
Non-volatile protection
Password protection
The M29W128GH and M29W128GL are offered in TSOP56 (14 x 20 mm), and TBGA64 (10 x 13 mm, 1 mm pitch), packages. The memories are delivered with all the bits erased (set to '1').

M29W128GL Maximum Ratings

Symbol Parameter Min Max Unit
TBIAS Temperature under bias -50 125
TSTG Storage temperature -65 150
VIO Input or output voltage(1)(2) −0.6 VCC + 0.6 V
VCC Supply voltage −0.6 4 V
VCCQ Input/output supply voltage −0.6 4 V
VID Identification voltage −0.6 13.5 V
VPPH(3) Program voltage −0.6 13.5 V

M29W128GL Features

Supply voltage
VCC = 2.7 to 3.6 V for Program, Erase and Read
VCCQ = 1.65 to 3.6 V for I/O buffers
VPPH = 12 V for Fast Program (optional)
Asynchronous Random/Page Read
Page size: 8 words or 16 bytes
Page access: 25, 30 ns
Random access: 60 (only available upon customer request) or 70, 80 ns
Fast Program commands
32 words (64-byte write buffer)
Enhanced Buffered Program commands
256 words
Programming time
16 s per byte/word typical
Chip program time: 5 s with VPPH and 8 s without VPPH
Memory organization
M29128GH/L: 128 main blocks, 128 Kbytes/64 Kwords each
Program/Erase controller
Embedded byte/word program algorithms
Program/ Erase Suspend and Resume
Read from any block during Program Suspend
Read and Program another block during
Erase Suspend
Unlock Bypass/Block Erase/Chip Erase/Write to Buffer/Enhanced Buffered Program commands
Faster Production/Batch Programming
Faster Block and Chip Erase
VPP/WP pin for Fast Program and Write: protects first or last block regardless of block protection settings
Software protection:
Volatile protection
Non-volatile protection
Password protection
Common Flash interface
64 bit security code
128 word extended memory block
Extra block used as security block or to store additional information
Low power consumption
Standby and automatic standby
Minimum 100,000 Program/Erase cycles per block
ECOPACK® packages

M29W128GL Connection Diagram

M29W128GL  Connection Diagram

M29W128GL datasheet

M29W128GL60N6E
PDF/DataSheet Download

Find M29W128GL Suppliers

  • ·M2901V
  •  
  • ORDERING INFORMATION 
  • 149016 KB
  • M2901V Datasheet Download
  • ·M2907A
  • ETC [ETC] 
  • Mini size of Discrete semiconductor elements 
  • 512569 KB
  • M2907A Datasheet Download
  • ·M293
  • STMICROELECTRONICS [STMicroelectronics] 
  • EPM 32 ELECTRONIC PROGRAM MEMORY FOR 32 STATIONS 
  • 2159674 KB
  • M293 Datasheet Download
  • ·M293B1
  • STMICROELECTRONICS [STMicroelectronics] 
  • EPM 32 ELECTRONIC PROGRAM MEMORY FOR 32 STATIONS 
  • 2159674 KB
  • M293B1 Datasheet Download
  • ·M295V002B-120K1TR
  • STMICROELECTRONICS [STMicroelectronics] 
  • 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 
  • 200998 KB
  • M295V002B-120K1TR Datasheet Download
  • ·M295V002B-120K6TR
  • STMICROELECTRONICS [STMicroelectronics] 
  • 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 
  • 200998 KB
  • M295V002B-120K6TR Datasheet Download
  • ·M295V002B-120N1TR
  • STMICROELECTRONICS [STMicroelectronics] 
  • 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 
  • 200998 KB
  • M295V002B-120N1TR Datasheet Download
  • ·M295V002B-120N6TR
  • STMICROELECTRONICS [STMicroelectronics] 
  • 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 
  • 200998 KB
  • M295V002B-120N6TR Datasheet Download

M29W128GL Relative Products

  • M29W128GH70ZS6E

    M29W128GH70ZS6E

    IC FLSH 128MB 3V 70NS LBP FBGA64

  • M29W128GH70N6E

    M29W128GH70N6E

    The M29W128GH70N6E is designed as one kind of 128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply flash memory device that is divided into 64-Kword/128-Kbyte uniform blocks that can be erased independently so it is possible to preserve valid da...

  • M29W128GH

    M29W128GH

    The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to it...

  • M29W128FL-70N6E

    M29W128FL-70N6E

    The M29W128FL-70N6E is kind of 128 Mbit non-volatile memory that can be read, erased and reprogrammed. The device supports asychronous random read and page read from all blocks of the memory. It has an extra 128 word (256 byte) extended memory block that can...

  • M29W128FL

    M29W128FL

    The M29W128FH and M29W128FL are 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. At Power-up the memories default to Read mode. T...

  • M29W128FH-70N6E

    M29W128FH-70N6E

    The M29W128FH-70N6E is kind of 128 Mbit non-volatile memory that can be read, erased and reprogrammed. The device supports asychronous random read and page read from all blocks of the memory. It has an extra 128 word (256 byte) extended memory block that can...

Hotspot Suppliers Product

  • Models: STB25NM50N
Price: 0.8-0.9 USD

    STB25NM50N

    Price: 0.8-0.9 USD

    MOSFET N-Channel, Metal Oxide, TO252

  • Models: NDY0505C
Price: 0.01-0.02 USD

    NDY0505C

    Price: 0.01-0.02 USD

    low profile, DC/DC converter, 3W, 5VOUT, DIP24, Power density 0.90W/cm3, Internal SMD construction

  • Models: GRM155R71C103KA01D
Price: 0.001-0.002 USD

    GRM155R71C103KA01D

    Price: 0.001-0.002 USD

    chip Monolithic ceramic capacitor, reflow soldering

  • Models: UPSD3233B-40T6
Price: 4.78-6.25 USD

    UPSD3233B-40T6

    Price: 4.78-6.25 USD

    QFP52, flash programmable system device, 8032 microcontroller core, 8-BIT, 14.0 V

  • Models: DCR010505U
Price: 6.5-7 USD

    DCR010505U

    Price: 6.5-7 USD

    output-regulated DC/DC converters, galvanically-isolated output power, low output noise

  • Models: LM2596S-5.0
Price: 0.001-5 USD

    LM2596S-5.0

    Price: 0.001-5 USD

    150 kHz, 3A Step-Down Voltage Regulator, High efficiency, TTL shutdown capability, TO-263

  • Models: YPPD-J018E
Price: 10-100 USD

    YPPD-J018E

    Price: 10-100 USD

    High frequency, 1.5V to 3.3V, Transistor, YPPD-J018E, LG Electronics

  • Models: BTS711L1
Price: 0.1-2 USD

    BTS711L1

    Price: 0.1-2 USD

    4 N channel, HGH SIDE, P-DS020-9, Smart High-Side Power Switch, SOP-20, 43V

  • Models: AA150XJ01
Price: 0.1-1 USD

    AA150XJ01

    Price: 0.1-1 USD

    Mitsubishi, AA150XJ01, LCD

  • Models: M27C1001-10F1
Price: 1-2 USD

    M27C1001-10F1

    Price: 1-2 USD

    1 Mbit (128Kb x 8) UV EPROM, OTP EPROM, DIP

  • Models: LM317T
Price: 1-3 USD

    LM317T

    Price: 1-3 USD

    a monolithic integrated circuit ,TO-220, ISOWATT220, TO-3, D2PAK

  • Models: TLP550
Price: 0.95-1 USD

    TLP550

    Price: 0.95-1 USD

    Photocoupler, 8-DIP, 8mA, 2500Vrms, TTL compatible, RoHS Non-Compliant, trans-out

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All