M29W160EB-70N6E

The M29W160EB-70N6E is a kind of 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The memory is offered TFBGA48 (0.8mm pitch) package.

There are some features M29W160EB-70N6E as follows. First is programming time which is 10s per Byte/Word typical. The second is 35 memory blocks which contains 1 boot block (top or bottom location), 2 parameter and 32 main blocks. Then is program/erase controller which uses Embedded Byte/Word Program algorithms. Next is erase suspend and resume modes. The fifth is unlock bypass program command. The sixth is temporary block unprotection mode. The seventh is common flash interface which is 64 bit security code. The eighth is low power consumption. The last one is 100,000 program/erase cycles per block.

The following is about the maximum ratings M29W160EB-70N6E. The TBIAS (Temperature Under Bias) is from -50 to 125. The TSTG (Storage Temperature) is from -65 to 150. The minimum VIO (Input or Output Voltage) is -0.6 V and the maximum is VCC +0.6 V. The minimum VCC (Supply Voltage) is -0.6 V and the maximum is 4 V. The minimum VID (Identification Voltage) is -0.6 V and the maximum is 13.5 V.