M29W160EB70N6E

Flash 2Mx8 or 1Mx16 70ns

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SeekIC No. : 00467237 Detail

M29W160EB70N6E: Flash 2Mx8 or 1Mx16 70ns

floor Price/Ceiling Price

Part Number:
M29W160EB70N6E
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Data Bus Width : 8 bit, 16 bit Memory Type : NOR Flash
Memory Size : 16 MB Architecture : Sectored
Interface Type : CFI Access Time : 70 ns
Supply Voltage - Max : 3.6 V Supply Voltage - Min : 2.7 V
Maximum Operating Current : 10 mA Operating Temperature : + 85 C
Mounting Style : SMD/SMT Package / Case : TSOP-1-48
Packaging : Tray    

Description

Timing Type :
Access Time : 70 ns
Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 2.7 V
Mounting Style : SMD/SMT
Packaging : Tray
Operating Temperature : + 85 C
Interface Type : CFI
Memory Size : 16 MB
Memory Type : NOR Flash
Architecture : Sectored
Maximum Operating Current : 10 mA
Data Bus Width : 8 bit, 16 bit
Package / Case : TSOP-1-48


Pinout

  Connection Diagram


Description

The M29W160EB70N6E is designed as one kind of 16 Mbit (2Mb x8 or 1Mb x16, boot block) 3V supply flash memory device that is offered TSOP48 (12 x 20 mm) and TFBGA48 (0.8 mm pitch) packages. And this device is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

Features of the M29W160EB70N6E are:(1)supply voltage: Vcc = 2.7 V to 3.6 V for program, erase and read;(2)access times: 70, 90 ns;(3)programming time 10s per byte / word typical;(4)35 memory blocks: 1 boot block (top or bottom location) and 2 parameter and 32 main blocks;(5)program / erase controller - embedded byte / word program algorithms;(6)erase suspend and resume modes - read and program another block during erase suspend;(7)unlock bypass program command - faster production / batch programming;(8)temporary block unprotection mode;(9)low power consumption - standby and automatic standby;(10)100,000 program / erase cycles per block.

The absolute maximum ratings of the M29W160EB70N6E can be summarized as:(1)Temperature Under Bias: -50 to 125 °C;(2)Storage Temperature: -65 to 150 °C;(3)Input or Output Voltage: -0.6 to Vcc+0.6 V;(4)Supply Voltage: -0.6 to 4 V;(5)Identification Voltage: -0.6 to 13.5 V. If you want to know more information such as the electrical characteristics about the M29W160EB70N6E, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationM29W160EB70N6E
VendorNumonyx/ST Micro
CategoryIntegrated Circuits (ICs)
Memory TypeFLASH - Nor
Memory Size16M (2M x 8 or 1M x 16)
Speed70ns
InterfaceParallel
Package / Case48-TSOP
PackagingTray
Voltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryFLASH
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names M29W160EB70N6E
M29W160EB70N6E



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