M29W160ET70N6F

Access Time :
Timing Type :
Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 2.7 V
Mounting Style : SMD/SMT
Operating Temperature : + 85 C
Memory Type : NOR Flash
Architecture : Sectored
Packaging : Reel
Memory Size : 16 Mbit
Interface Type : Parallel
Maximum Operating Current : 10 mA
Data Bus Width : 8 bit, 16 bit
Package / Case : TSOP-1-48


Pinout




Description

The M29W160ET70N6F is a kind of 16 Mbit 3V Supply Flash Memory. It can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. It is available in TFBGA48 (0.8mm pitch) package.

There are some features M29W160ET70N6F as follows: (1)supply voltage: vcc = 2.7v to 3.6v for program, erase and read; (2)access times: 70, 90ns; (3)programming time: 10s per byte/word typical; (4)35 memory blocks: 1 boot block (top or bottom location); 2 parameter and 32 main blocks; (5)program/erase controller: embedded byte/word program algorithms; (6)erase suspend and resume modes: read and program another block during erase suspend; (7)unlock bypass program command: faster production/batch programming; (8)temporary block unprotection mode; (9)common flash interface: 64 bit security code; (10)low power consumption: standby and automatic standby 100,000 program/erase cycles per block.

Then is about the absolute maximum ratings M29W160ET70N6F: (1)TBIAS, Temperature Under Bias: 50 to 125 ; (2)TSTG, Storage Temperature: 65 to 150 ; (3)VIO, Input or Output Voltage: 0.6 VCC +0.6 V; (4)VCC, Supply Voltage: 0.6 to 4 V; (5)VID, Identification Voltage: 0.6 to 13.5 V.