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Part Number: M29W320DT
Description: The M29W320D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These oper...
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M29W320DT
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General Description
M29W320DT General Description
The M29W320D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
M29W320DT Maximum Ratings
| Symbol | Parameter | Min | Max | Unit |
| TBIAS | Temperature Under Bias | 50 | 125 | °C |
| TSTG | Storage Temperature | 65 | 150 | °C |
| VIO | Input or Output Voltage (1,2) | 0.6 | VCC +0.6 | V |
| VCC | Supply Voltage | 0.6 | 4 | V |
| VID | Identification Voltage | 0.6 | 13.5 | V |
| VPP | Program Voltage | 0.6 | 13.5 | V |
M29W320DT Features
SUPPLY VOLTAGE
VCC = 2.7V to 3.6V for Program, Erase and Read
VPP =12V for Fast Program (optional)
ACCESS TIME: 70, 90ns
PROGRAMMING TIME
10µs per Byte/Word typical
67 MEMORY BLOCKS
1 Boot Block (Top or Bottom Location)
2 Parameter and 64 Main Blocks
PROGRAM/ERASE CONTROLLER
Embedded Byte/Word Program algorithms
ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
VPP/WP PIN for FAST PROGRAM and WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION MODE
COMMON FLASH INTERFACE
64 bit Security Code
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Top Device Code M29W320DT: 22CAh
Bottom Device Code M29W320DB: 22CBh
VCC = 2.7V to 3.6V for Program, Erase and Read
VPP =12V for Fast Program (optional)
ACCESS TIME: 70, 90ns
PROGRAMMING TIME
10µs per Byte/Word typical
67 MEMORY BLOCKS
1 Boot Block (Top or Bottom Location)
2 Parameter and 64 Main Blocks
PROGRAM/ERASE CONTROLLER
Embedded Byte/Word Program algorithms
ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
VPP/WP PIN for FAST PROGRAM and WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION MODE
COMMON FLASH INTERFACE
64 bit Security Code
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Top Device Code M29W320DT: 22CAh
Bottom Device Code M29W320DB: 22CBh
M29W320DT Connection Diagram
M29W320DT
PDF/DataSheet Download
- Datasheet: M29W320DT
- File Size: 874087 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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