M29W320DT90N1

The M29W320DT90N1 is designed as one kind of 32 Mbit (4Mb x8 or 2Mb x16, boot block) 3V supply flash memory device that is divided into blocks that can be erased independently, so it is possible to preserve valid data while old data is erased. Also this device is available in SO44, TSOP48 (12 x 20 mm), TFBGA48 0.8 mm pitch (6 x 9 mm and 6 x 8 mm) packages. The command set required to control the memory is consistent with JEDEC standards.

Features of the M29W320DT90N1 are:(1)100,000 Program/Erase cycles per block;(2)Temporary Block Unprotection mode;(3)supply voltage: Vcc = 2.7V to 3.6V for program, erase and read and VPP =12V for fast program (optional);(4)access time: 70, 90 ns;(5)programming time: 10s per byte/word typical and double word/ quadruple byte program;(6)unlock bypass program command faster production / batch programming;(7)Program/Erase controller - Embedded byte/word program algorithms;(8)temporary block unprotection mode.

The absolute maximum ratings of the M29W320DT90N1 can be summarized as:(1)Temperature Under Bias: -50 to 125 °C;(2)Storage Temperature: -65 to 150 °C;(3)Input or Output Voltage: -0.6 to VCC+0.6 V;(4)Supply Voltage: -0.6 to 4 V;(5)Identification Voltage: -0.6 to 13.5 V. If you want to know more information such as the electrical characteristics about the M29W320DT90N1, please download the datasheet in www.seekic.com or www.chinaicmart.com.