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MFG:Numonyx/ST Micro  Category:Integrated Circuits (ICs)  

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Part Number: M29W800DB45ZE6E

Category: Integrated Circuits (ICs)

MFG: Numonyx/ST Micro

 

 

Descriptions: IC FLASH 8MB 3V 45NS BB TFBGA48

Price Break

1
10
100
250
500
1000
2500

Unit Price

4.99000
4.09600
3.45600
3.07200
2.81600
2.12480
1.92000

Extended Price

4.99
40.96
345.60
768.00
1408.00
2124.80
4800.00

(All prices are in USD) Prices for reference only
Urgent Purchase

M29W800DB45ZE6E General Description

IC FLASH 8MB 3V 45NS BB TFBGA48

M29W800DB45ZE6E Parameters

Technical/Catalog InformationM29W800DB45ZE6E
VendorNumonyx/ST Micro
CategoryIntegrated Circuits (ICs)
Memory TypeFLASH - Nor
Memory Size8M (1M x 8 or 512K x 16)
Speed45nS
InterfaceParallel
Package / Case48-TFBGA
PackagingTray
Voltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryFLASH
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names M29W800DB45ZE6E
M29W800DB45ZE6E

M29W800DB45ZE6E datasheet

M2901V
PDF/DataSheet Download

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  • M29W800DB45N6E

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    The M29W800DB is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be...

  • M29W800D

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    Features of the M29W800D are:(1)supply voltage is Vcc=2.7 to 3.6V for program,erase and read;(2)access time is 70ns,90ns;(3)programming time 100s/byte/word typical;(4)19 memory blocks;(5)program/erase controller;(6)erase suspend and resume modes;(7)unlock by...

  • M29W800B

    M29W800B

    The M29W800B is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-ByteorWordby- Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high vol...

  • M29W800AT

    M29W800AT

    The M29W800AT is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary hig...

  • M29W800AB

    M29W800AB

    The M29W800AB is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary hig...

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