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Part Number: M2V56S30TP

 

 

 

 

Description: M2V56S20TP is a 4-bank x 16777216-word x 4-bit, 2V56S30TP is a 4-bank x 8388608-word x 8-bit, 2V56S40T...


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M2V56S30TP General Description


M2V56S20TP is a 4-bank x 16777216-word x 4-bit, 2V56S30TP is a 4-bank x 8388608-word x 8-bit, 2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz (-7/-8) , 133MHz (-6), and are suitable for main memory or graphic memory in computer systems.

M2V56S30TP Maximum Ratings



Symbol
Parameter
Conditions
Ratings
Unit
Vdd Supply Voltage
with respect to Vss
-0.5 ~ 4.6
V
VddQ Supply Voltage for Output
with respect to VssQ
-0.5 ~ 4.6
V
VI Input Voltage
with respect to Vss
-0.5 ~ Vdd+0.5
V
VO Output Voltage
with respect to VssQ
-0.5~ VddQ+0.5
V
IO Output Current
50
mA
Pd Power Dissipation
Ta = 25
1000
mW
Topr Operating Temperature
0 ~ 70
Tstg Storage Temperature
-65 ~ 150


M2V56S30TP Features

· Single 3.3v±0.3V power supply
· Max. Clock frequency 100MHz(-7/-8), 133MHz (-6)
· Fully Synchronous operation referenced to clock rising edge
· Single Data Rate
· 4 bank operation controlled by BA0, BA1 (Bank Address)
· /CAS latency- 2/3 (programmable)
· Burst length- 1/2/4/8/full page (programmable)
· Burst type- sequential / interleave (programmable)
· Random column access
· Auto precharge / All bank precharge controlled by A10
· 8192 refresh cycles /64ms (4 banks concurrent refresh)
· Auto refresh and Self refresh
· Row address A0-12 / Column address A0-9,11(x4)/ A0-9(x8)/ A0-8(x16)
· LVTTL Interface
· 400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch

M2V56S30TP Connection Diagram

M2V56S30TP  Connection Diagram

M2V56S30TP datasheet

M2V56S30TP
PDF/DataSheet Download

  • Datasheet: M2V56S30TP
  • File Size: 249960 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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