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MFG:ST
Part Number: M36DR432AD
MFG: ST
Description: The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory devices: a 32 Mbit (2Mbit x16) non...
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M36DR432AD
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DataSheet
General Description
M36DR432AD General Description
The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory devices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM.
The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch package and supplied with all the bits erased (set to.
M36DR432AD Maximum Ratings
| Symbol | Parameter | Value | Unit |
| TA | Ambient Operating Temperature (3) | 40 to 85 | °C |
| TBIAS | Temperature Under Bias | 40 to 85 | °C |
| TSTG | Storage Temperature | 55 to 150 | °C |
| VIO(2) | Input or Output Voltage | 0.5 to VDD (3)+0.5 |
V |
| VDDF | Supply Voltage | 0.5 to 2.7 | V |
| VDDS | SRAM Chip Supply Voltage | 0.5 to 2.4 | |
| VPPF | Program Voltage | 0.5 to 13 | V |
2. Depends on range.
3. VDD = VDDS = VDDF.
M36DR432AD Features
` Multiple Memory Product
1 bank of 32 Mbit (2Mb x16) Flash Memory
1 bank of 4 Mbit (256Kb x16) SRAM
` SUPPLY VOLTAGE
VDDF = VDDS =1.65V to 2.2V
VPPF = 12V for Fast Program (optional)
` ACCESS TIMES: 85ns, 100ns, 120ns
` LOW POWER CONSUMPTION
` ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Top Device Code, M36DR432AD: 00A0h
Bottom Device Code, M36DR432BD: 00A1h
1 bank of 32 Mbit (2Mb x16) Flash Memory
1 bank of 4 Mbit (256Kb x16) SRAM
` SUPPLY VOLTAGE
VDDF = VDDS =1.65V to 2.2V
VPPF = 12V for Fast Program (optional)
` ACCESS TIMES: 85ns, 100ns, 120ns
` LOW POWER CONSUMPTION
` ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Top Device Code, M36DR432AD: 00A0h
Bottom Device Code, M36DR432BD: 00A1h
M36DR432AD
PDF/DataSheet Download
- Datasheet: M36DR432AD
- File Size: 854163 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
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