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M36DR432BD

Features: ` Multiple Memory Product 1 bank of 32 Mbit (2Mb x16) Flash Memory 1 bank of 4 Mbit (256Kb x16) SRAM` SUPPLY VOLTAGE VDDF = VDDS =1.65V to 2.2V VPPF = 12V for Fast Program (optional)` ACCESS TIMES: 85ns, 100ns, 120ns` LOW POWER CONSUMPTION` ELECTRONIC SIGNATURE Manufacturer Code: 0020h T...

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SeekIC No. : 004404836 Detail

M36DR432BD: Features: ` Multiple Memory Product 1 bank of 32 Mbit (2Mb x16) Flash Memory 1 bank of 4 Mbit (256Kb x16) SRAM` SUPPLY VOLTAGE VDDF = VDDS =1.65V to 2.2V VPPF = 12V for Fast Program (optional)` ACCE...

M36DR432BD Data Sheet

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Part Number:
M36DR432BD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

` Multiple Memory Product
1 bank of 32 Mbit (2Mb x16) Flash Memory
1 bank of 4 Mbit (256Kb x16) SRAM
` SUPPLY VOLTAGE
VDDF = VDDS =1.65V to 2.2V
VPPF = 12V for Fast Program (optional)
` ACCESS TIMES: 85ns, 100ns, 120ns
` LOW POWER CONSUMPTION
` ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Top Device Code, M36DR432AD: 00A0h
Bottom Device Code, M36DR432BD: 00A1h


Specifications

Symbol Parameter Value Unit
TA Ambient Operating Temperature (3) 40 to 85 °C
TBIAS Temperature Under Bias 40 to 85 °C
TSTG Storage Temperature 55 to 150 °C
VIO(2) Input or Output Voltage 0.5 to VDD
(3)+0.5		 V
VDDF Supply Voltage 0.5 to 2.7 V
VDDS SRAM Chip Supply Voltage 0.5 to 2.4  
VPPF Program Voltage 0.5 to 13 V
Note: 1. Minimum voltage may undershoot to 2V during transition and for less than 20ns.
2. Depends on range.
3. VDD = VDDS = VDDF.


Description

The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory devices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM.

The memory M36DR432AD/BD is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch package and supplied with all the bits erased (set to.



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