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Part Number: M464S3354BTS-C(L)7A

 

 

 

 

 

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M464S3354BTS-C(L)7A Maximum Ratings

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD & VDDQ supply relative to VSS
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD
1.0 * # of component
W
Short circuit current
IOS
50
mA

Note :Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

M464S3354BTS-C(L)7A Features

• Burst mode operation
• Auto & self refresh capability (8192 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs Latency (Access from column address)
   Burst length (1, 2, 4, 8)
   Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM

M464S3354BTS-C(L)7A datasheet

M464S0924DTS
PDF/DataSheet Download

  • Datasheet: M464S0924DTS
  • File Size: 87133 KB
  • Manufacturer: SAMSUNG [Samsung semiconductor]
  • Click here to Download

Find M464S3354BTS-C(L)7A Suppliers

  • ·M464S0924DTS-C1H
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  • ·M464S0924DTS-C7C
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  • ·M464S0924DTS-L1L
  • SAMSUNG [Samsung semiconductor] 
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  • M464S0924DTS-L1L Datasheet Download
  • ·M464S0924DTS-L7A
  • SAMSUNG [Samsung semiconductor] 
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  • ·M464S0924DTS-L7C
  • SAMSUNG [Samsung semiconductor] 
  • 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 
  • 87133 KB
  • M464S0924DTS-L7C Datasheet Download

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