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Part Number: M54522FP

 

MFG: MIT

 

 

Description: M54522P and M54522FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits...


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M54522FP General Description


M54522P and M54522FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

M54522FP Maximum Ratings

Symbol
Parameter
Conditions
Ratings
Unit
VCEO Clamping-emitter voltage Ourrent,H
-0.5to+40
V
Ic Collector current Ourrent per circuit ouptput ,L
400
mA
VI Input voltage  
-0.5to+40
V
IF Clamping diode forward current  
500
mA
VR Clamping diode reverse voltage  
40
V
Pd Power dissipation Ta = 25°C, when mounted on board
1.79(P)/1.10(FP)
W
Topr Operating temperature  
-20to+75
°C
Tstg Storage temperature  
-55to+125

M54522FP Features

` High breakdown voltage (BVCEO40V)
High-current driving (Ic(max) = 400mA)
With clamping diodes
Driving available with PMOS IC output
Wide operating temperature range (Ta = 20 to +75°C)

M54522FP Typical Application

Drives of relays and printers, digit drives of indication elements(LEDs and lamps), and interfaces between microcomputer output and high-current or high-voltage systems

M54522FP Connection Diagram

M54522FP  Connection Diagram

M54522FP datasheet

M54522FP
PDF/DataSheet Download

  • Datasheet: M54522FP
  • File Size: 115447 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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