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Part Number: M54577P

 

 

 

 

Description: M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconducto...


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M54577P General Description


M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

M54577P Maximum Ratings

Symbol
Parameter
Conditions
Ratings
Unit
VCC
Supply voltage  
13
V
VCEO
Collector-emitter voltage Output, H
0.5 ~+30
V
IC
Collector current Current per circuit output, L
30
A
VI
Input voltage  
20 ~ VCC
V
Pd
Power dissipation Ta = 25°C, when mounted on board
1.47
W
Topr
Operating temperature  
20 ~ +75
°C
Tstg
Storage temperature  
55 ~ +125
°C

M54577P Features

`Medium breakdown voltage (BVCEO 30V)
`Output sink current (IC(max) = 30mA)
`Driving available with MOS (PMOS, CMOS) IC output
`Low output saturation voltage (VCE(sat) = 0.35V at IC = 20mA)
`Wide operating temperature range (Ta = 20 to +75°C)

M54577P Typical Application

Driving of digit drives of indication elements (LEDs and lamps)

M54577P Connection Diagram

M54577P  Connection Diagram

M54577P datasheet

M54577P
PDF/DataSheet Download

  • Datasheet: M54577P
  • File Size: 36970 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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