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M5M29F25611VP

Features: `On-board single power supply(Vcc) : Vcc=3.0V to 3.6V`OrganizationAND Flash Memory : (2048+64)bytes x (More than 16,057 sectors)Data register : (2048+64)bytes`Multi-level memory cell:2bit / per memory cell.`Automatic programming : Sector program time : 2.5 ms typ.System bus free Address,...

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SeekIC No. : 004406174 Detail

M5M29F25611VP: Features: `On-board single power supply(Vcc) : Vcc=3.0V to 3.6V`OrganizationAND Flash Memory : (2048+64)bytes x (More than 16,057 sectors)Data register : (2048+64)bytes`Multi-level memory cell:2bit ...

M5M29F25611VP Data Sheet

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Part Number:
M5M29F25611VP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`On-board single power supply(Vcc) :
            Vcc=3.0V to 3.6V
`Organization
   AND Flash Memory :
           (2048+64)bytes x (More than 16,057 sectors)
   Data register : (2048+64)bytes
`Multi-level memory cell:
           2bit / per memory cell.
`Automatic programming :
           Sector program time : 2.5 ms typ.
           System bus free
           Address,data latch function
           Internal automatic program verify function
           Status data polling function
`Automatic erase :
           Single sector erase time : 1.0 ms typ.System bus free
           Internal automatic erase verify function
           Status data polling function
`Erase mode :
          Single sector erase ((2048+64)byte unit)
`Fast access time :
          Serial read First access time : 50s max.
          Serial access time : 50ns max.
`Low power dissipation :
          ICC2 = 30mA typ. / 50mA max. (Read)
          ISB2 = 30A typ. / 50A max. (Standby)
          ICC3 = 20mA typ. / 40mA max. (Program)
          ICC4 = 20mA typ. / 40mA max. (Erase)
          ISB3 = 1A typ. / 10A max. (Deep standby)
`Package : 48pin-TSOP(I) (12.0 x 20.0mm2)


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Ratings
Unit
VCC VCC Voltage With Respect to GND
-0.6to7
V
VIN,VOUT All input or output voltages
-0.6to7 1)
V
Topr Temperature under Bias  
0to70
°C
Tstg Storage temperature range 2)  
-65to125
°C
Tbias Storage temperature under bias  
-10to+80
°C
Notes : 1. VIN , VOUT = -2.0V for pulse width 20ns
2. Device storage temperature range before programming.


Description

The MITSUBISHI M5M29F25611 is a CMOS Flash Memory with AND type multi-level memory cells.

M5M29F25611 has fully automatic programming and erase capabilities with a single 3.3V power supply.

The M5M29F25611 functions are controlled by simple external commands.To fit the I/O card applications, the unit of programming and erase is as small as (2048+64) bytes.

Available sectors of M5M29F25611 are more than 16,057(98% of all sector address) and less than 16,384 sectors.




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