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MFG:MITSUBISHI
Part Number: M5M29F25611VP
MFG: MITSUBISHI
Description: The MITSUBISHI M5M29F25611 is a CMOS Flash Memory with AND type multi-level memory cells. It h...
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M5M29F25611VP
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General Description
M5M29F25611VP General Description
The MITSUBISHI M5M29F25611 is a CMOS Flash Memory with AND type multi-level memory cells.
It has fully automatic programming and erase capabilities with a single 3.3V power supply.
The functions are controlled by simple external commands.To fit the I/O card applications, the unit of programming and erase is as small as (2048+64) bytes.
Available sectors of M5M29F25611 are more than 16,057(98% of all sector address) and less than 16,384 sectors.
M5M29F25611VP Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
| VCC | VCC Voltage | With Respect to GND |
-0.6to7 |
V |
| VIN,VOUT | All input or output voltages |
-0.6to7 1) |
V | |
| Topr | Temperature under Bias |
0to70 |
°C | |
| Tstg | Storage temperature range 2) |
-65to125 |
°C | |
| Tbias | Storage temperature under bias |
-10to+80 |
°C |
2. Device storage temperature range before programming.
M5M29F25611VP Features
`On-board single power supply(Vcc) :
Vcc=3.0V to 3.6V
`Organization
AND Flash Memory :
(2048+64)bytes x (More than 16,057 sectors)
Data register : (2048+64)bytes
`Multi-level memory cell:
2bit / per memory cell.
`Automatic programming :
Sector program time : 2.5 ms typ.
System bus free
Address,data latch function
Internal automatic program verify function
Status data polling function
`Automatic erase :
Single sector erase time : 1.0 ms typ.System bus free
Internal automatic erase verify function
Status data polling function
`Erase mode :
Single sector erase ((2048+64)byte unit)
`Fast access time :
Serial read First access time : 50s max.
Serial access time : 50ns max.
`Low power dissipation :
ICC2 = 30mA typ. / 50mA max. (Read)
ISB2 = 30A typ. / 50A max. (Standby)
ICC3 = 20mA typ. / 40mA max. (Program)
ICC4 = 20mA typ. / 40mA max. (Erase)
ISB3 = 1A typ. / 10A max. (Deep standby)
`Package : 48pin-TSOP(I) (12.0 x 20.0mm2)
Vcc=3.0V to 3.6V
`Organization
AND Flash Memory :
(2048+64)bytes x (More than 16,057 sectors)
Data register : (2048+64)bytes
`Multi-level memory cell:
2bit / per memory cell.
`Automatic programming :
Sector program time : 2.5 ms typ.
System bus free
Address,data latch function
Internal automatic program verify function
Status data polling function
`Automatic erase :
Single sector erase time : 1.0 ms typ.System bus free
Internal automatic erase verify function
Status data polling function
`Erase mode :
Single sector erase ((2048+64)byte unit)
`Fast access time :
Serial read First access time : 50s max.
Serial access time : 50ns max.
`Low power dissipation :
ICC2 = 30mA typ. / 50mA max. (Read)
ISB2 = 30A typ. / 50A max. (Standby)
ICC3 = 20mA typ. / 40mA max. (Program)
ICC4 = 20mA typ. / 40mA max. (Erase)
ISB3 = 1A typ. / 10A max. (Deep standby)
`Package : 48pin-TSOP(I) (12.0 x 20.0mm2)
M5M29F25611VP Connection Diagram
M5M29F25611VP
PDF/DataSheet Download
- Datasheet: M5M29F25611VP
- File Size: 511467 KB
- Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
- Click here to Download
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