MFG:MITSUBISHI Package Cooled:n/a D/C:03+
MFG: MITSUBISHI
Package Cooled: n/a
D/C: 03+
Description: The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit...
The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and personal computing, and communication products. The M5M29GB/T161BWG are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 6x8-balls CSP (0.75mm ball pitch) .
|
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
| VCC | VCC Voltage | With Respect to Ground |
-0.2to4.6 |
V |
| VI1 | All input or output voltage except Vcc,A9,/RP# 1) |
-0.6to4.6 |
V | |
| Ta | Ambient Temperature |
-40to85 |
°C | |
| Tbs | Temperature under Bias |
-50to95 |
°C | |
| Tstg | Storage temperature |
-65to125 |
°C | |
| Iout | Output Short Circuit Current |
0to100 |
mA |
`Organization ....................................1048,576 word x 16bit
(M5M29GB/T161BWG)
`Supply voltage............................................ VCC = 2.7~3.6V
`Access time .......................................................90ns (Max.)
`Power Dissipation
Read ......................................54 mW (Max. at 5MHz)
(After Automatic Power saving)........... 0.33W (typ.)
Program/Erase ..................................126 mW (Max.)
Standby ..............................................0.33W (typ.)
Deep power down mode.................... 0.33W (typ.)
`Auto program for Bank(I)
Program Time........................................... .......4ms (typ.)
Program Unit
(Byte Program) ......................................1word
(Page Program) .................................128word
`Auto program for Bank(II)
Program Time.................................................. 4ms (typ.)
Program Unit ....................................................128word
`Auto Erase
Erase time.............................................. 40 ms (typ.)
Erase Unit
Bank(I) Boot Block ............................16Kword x 1
Parameter Block ...............................16Kword x 7
Bank(II) Main Block ..........................32Kword x 28
`Program/Erase cycles ........................................100Kcycles
`Boot Block
M5M29GB161BWG............................. Bottom Boot
M5M29GT161BWG................................... Top Boot
`Other Functions
Soft Ware Command Control
Selective Block Lock
Erase Suspend/Resume
Program Suspend/Resume
Status Register Read
Alternating Back Ground Program/Erase Operation
Between Bank(I) and Bank(II)
`Package
7mm x 8.5mm CSP (Chip Scale Package)
- 6 x 8 balls, 0.75mm ball pitch
M5M29GB
PDF/DataSheet Download
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