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MFG:MIT D/C:09+
Part Number: M5M417400CJ
MFG: MIT
D/C: 09+
Description: This is a family of 4194304-word by 4-bit dynamic RAMS,fabricated with the high performance CMOS proce...
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M5M417400CJ
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DataSheet
General Description
M5M417400CJ General Description
This is a family of 4194304-word by 4-bit dynamic RAMS,fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.
The use of double-layer metal process combined with twin-well CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs.
Multiplexed address inputs permit both a reduction in pins and an increase in system densities.
M5M417400CJ Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Rating |
Unit |
| Vcc | Supply voltage |
With respect to Vss |
-1to+7 |
V |
| VI | Input voltage |
-1to+7 |
V | |
| Vo | Output voltage |
-1to+7 |
V | |
| Io | Output current |
50 |
mA | |
| Pd | Power dissipation | Ta=25 |
1000 |
mW |
| Topr | Operating temperature |
0to70 |
||
| Tstg | Storage temperature |
-65 to +150 |
M5M417400CJ Features
• Standard 26 pin SOJ, 26 pin TSOP
• Single 5V ± 10% supply
• Low stand-by power dissipation
5.5mW(Max) ..................................CMOS Input level
2.2mW (Max)* ...............................CMOS Input level
• Low operating power dissipation
M5M417400Cxx-5,-5S .................... 800.0mW (Max)
M5M417400Cxx-6,-6S .................... 660.0mW (Max)
M5M417400Cxx-7,-7S .................... 580.0mW (Max)
• Self refresh capability *
self refresh current ................................ 200.0 m A(Max)
• Fast-page mode, Read-modify-write, RAS-only refresh
• CAS before RAS refresh, Hidden refresh capabilities Early-write mode andOEto control output buffer impedance
• All inputs, output TTL compatible and low capacitance
• 2048 refresh cycles every 32ms (A0 ~ A10)
*Applicable to self refresh version (M5M417400CJ,TP-5S,-6S,-7S :option) only
• Single 5V ± 10% supply
• Low stand-by power dissipation
5.5mW(Max) ..................................CMOS Input level
2.2mW (Max)* ...............................CMOS Input level
• Low operating power dissipation
M5M417400Cxx-5,-5S .................... 800.0mW (Max)
M5M417400Cxx-6,-6S .................... 660.0mW (Max)
M5M417400Cxx-7,-7S .................... 580.0mW (Max)
• Self refresh capability *
self refresh current ................................ 200.0 m A(Max)
• Fast-page mode, Read-modify-write, RAS-only refresh
• CAS before RAS refresh, Hidden refresh capabilities Early-write mode andOEto control output buffer impedance
• All inputs, output TTL compatible and low capacitance
• 2048 refresh cycles every 32ms (A0 ~ A10)
*Applicable to self refresh version (M5M417400CJ,TP-5S,-6S,-7S :option) only
M5M417400CJ Typical Application
Main memory unit for computers, Microcomputer memory, Refresh memory for CRT
M5M417400CJ
PDF/DataSheet Download
- Datasheet: M5M417400CJ
- File Size: 673296 KB
- Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
- Click here to Download
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