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MFG:MITSUB D/C:SOJ
Part Number: M5M44260CJ
MFG: MITSUB
D/C: SOJ
Description: This is a family of 262144-word by 16-bit dynamic RAMs,fabricated with the high performance CMOS proce...
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M5M44260CJ
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DataSheet
General Description
M5M44260CJ General Description
This is a family of 262144-word by 16-bit dynamic RAMs,fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential.
The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is small enough for battery back-up application.
This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.
M5M44260CJ Features
`Standard 40pin SOJ, 44 pin TSOP (II)
Single 5V±10% supply
`Low stand-by power dissipation
CMOS Input level 5.5mW (Max)
CMOS Input level 550W (Max) *
`Operating power dissipation
M5M44260Cxx-5,-5S ....................688mW (Max)
M5M44260Cxx-6,-6S ....................605mW (Max)
M5M44260Cxx-7,-7S ....................523mW (Max)
`Self refresh capability *
Self refresh current ........................150A (Max)
`Extended refresh capability
Extended refresh current............... 150A (Max)
`Fast-page mode (512-column random access), Read-modify-write, RAS-only refresh, CASbefore RAS refresh, Hidden refresh capabilities.
`Early-write mode, LCAS / UCASand OE to control output buffer impedance
`512 refresh cycles every 8.2ms (A0~A8)
`512 refresh cycles every 128ms (A0~A8) *
`Byte or word control for Read/Write operation (2CAS, 1W type)
* : Applicable to self refresh version (M5M44260CJ,TP-5S,-6S,-7S
: option) only
Single 5V±10% supply
`Low stand-by power dissipation
CMOS Input level 5.5mW (Max)
CMOS Input level 550W (Max) *
`Operating power dissipation
M5M44260Cxx-5,-5S ....................688mW (Max)
M5M44260Cxx-6,-6S ....................605mW (Max)
M5M44260Cxx-7,-7S ....................523mW (Max)
`Self refresh capability *
Self refresh current ........................150A (Max)
`Extended refresh capability
Extended refresh current............... 150A (Max)
`Fast-page mode (512-column random access), Read-modify-write, RAS-only refresh, CASbefore RAS refresh, Hidden refresh capabilities.
`Early-write mode, LCAS / UCASand OE to control output buffer impedance
`512 refresh cycles every 8.2ms (A0~A8)
`512 refresh cycles every 128ms (A0~A8) *
`Byte or word control for Read/Write operation (2CAS, 1W type)
* : Applicable to self refresh version (M5M44260CJ,TP-5S,-6S,-7S
: option) only
M5M44260CJ Connection Diagram
|
Symbol |
Parameter |
Conditions |
Rating |
Unit |
| Vcc | Supply voltage |
With respect to Vss |
-1to+7 |
V |
| VI | Input voltage |
-1to+7 |
V | |
| Vo | Output voltage |
-1to+7 |
V | |
| Io | Output current |
50 |
mA | |
| Pd | Power dissipation | Ta=25 |
1000 |
mW |
| Topr | Operating temperature |
0to70 |
||
| Tstg | Storage temperature |
-65 to +150 |
M5M44260CJ
PDF/DataSheet Download
- Datasheet: M5M44260CJ
- File Size: 290196 KB
- Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
- Click here to Download
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