Purchase M5M44260CTP, In-stock M5M44260CTP From SeekIC.
Package Cooled:TSOP
Part Number: M5M44260CTP
Package Cooled: TSOP
Description: This is a family of 262144-word by 16-bit dynamic RAMs,fabricated with the high performance CMOS proce...
- Table of contents:
M5M44260CTP
-
Suppliers
DataSheet
General Description
M5M44260CTP General Description
This is a family of 262144-word by 16-bit dynamic RAMs,fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential.
The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is small enough for battery back-up application.
This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.
M5M44260CTP Features
`Standard 40pin SOJ, 44 pin TSOP (II)
Single 5V±10% supply
`Low stand-by power dissipation
CMOS Input level 5.5mW (Max)
CMOS Input level 550W (Max) *
`Operating power dissipation
M5M44260Cxx-5,-5S ....................688mW (Max)
M5M44260Cxx-6,-6S ....................605mW (Max)
M5M44260Cxx-7,-7S ....................523mW (Max)
`Self refresh capability *
Self refresh current ........................150A (Max)
`Extended refresh capability
Extended refresh current............... 150A (Max)
`Fast-page mode (512-column random access), Read-modify-write, RAS-only refresh, CASbefore RAS refresh, Hidden refresh capabilities.
`Early-write mode, LCAS / UCASand OE to control output buffer impedance
`512 refresh cycles every 8.2ms (A0~A8)
`512 refresh cycles every 128ms (A0~A8) *
`Byte or word control for Read/Write operation (2CAS, 1W type)
* : Applicable to self refresh version (M5M44260CJ,TP-5S,-6S,-7S
: option) only
Single 5V±10% supply
`Low stand-by power dissipation
CMOS Input level 5.5mW (Max)
CMOS Input level 550W (Max) *
`Operating power dissipation
M5M44260Cxx-5,-5S ....................688mW (Max)
M5M44260Cxx-6,-6S ....................605mW (Max)
M5M44260Cxx-7,-7S ....................523mW (Max)
`Self refresh capability *
Self refresh current ........................150A (Max)
`Extended refresh capability
Extended refresh current............... 150A (Max)
`Fast-page mode (512-column random access), Read-modify-write, RAS-only refresh, CASbefore RAS refresh, Hidden refresh capabilities.
`Early-write mode, LCAS / UCASand OE to control output buffer impedance
`512 refresh cycles every 8.2ms (A0~A8)
`512 refresh cycles every 128ms (A0~A8) *
`Byte or word control for Read/Write operation (2CAS, 1W type)
* : Applicable to self refresh version (M5M44260CJ,TP-5S,-6S,-7S
: option) only
M5M44260CTP Connection Diagram
|
Symbol |
Parameter |
Conditions |
Rating |
Unit |
| Vcc | Supply voltage |
With respect to Vss |
-1to+7 |
V |
| VI | Input voltage |
-1to+7 |
V | |
| Vo | Output voltage |
-1to+7 |
V | |
| Io | Output current |
50 |
mA | |
| Pd | Power dissipation | Ta=25 |
1000 |
mW |
| Topr | Operating temperature |
0to70 |
||
| Tstg | Storage temperature |
-65 to +150 |
M5M44260CTP-5
PDF/DataSheet Download
- Datasheet: M5M44260CTP-5
- File Size: 290196 KB
- Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
- Click here to Download
- ·M5M1
- ETC [ETC]
- MEDIUM CURRENT SILICON RECTIFIERS
- 183622 KB
- ·M5M27C202FP-12
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM
- 600293 KB
- ·M5M27C202FP-15
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM
- 600293 KB
- ·M5M27C202J-12
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM
- 600293 KB
- ·M5M27C202J-15
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM
- 600293 KB
- ·M5M27C202JK-10
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
- 575919 KB
- ·M5M27C202JK-12
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
- 575919 KB
- ·M5M27C202JK-12I
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
- 565302 KB
M5M44260CTP Relative Products
M5M44260CJ
This is a family of 262144-word by 16-bit dynamic RAMs,fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential.The use of double-layer metalization process techno...
M5M417400CTP
This is a family of 4194304-word by 4-bit dynamic RAMS,fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.The use of double-layer metal proces...
M5M417400CJ
This is a family of 4194304-word by 4-bit dynamic RAMS,fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.The use of double-layer metal proces...
M5M29T800FP
The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the periphera...
M5M29T161BWG
The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one b...
M5M29T160BVP-80
The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one b...
Hotspot Suppliers Product
2SA1302
Price: 2-4 USD
power transistor, -15A, -200V, 150W, Silicon PNP Epitaxial Type, TO-3PL, Toshiba Semiconductor
DT210N18KOF
Price: 45-47 USD
Phase Control Thyristor Module, 1200 to 1400 V, 410 A, 218000 A2s
2DI150D-050
Price: 10-35 USD
power transistor module, 600V, 1380W, 150A, free wheeling diode, high DC current gain, insulated t...
74HC595D
Price: 0.015-1.5 USD
8-stage serial shift register, high-speed, Si-gate CMOS device, SOP, -0.5 to +7 V
RX424024C
Price: 1-1.5 USD
lower PCB Relay, DIP, 24V, 21.9mA, transparent cover optional, Tyco Electronics
CNY17-2
Price: 0.2-0.3 USD
Optocoupler, Phototransistor Output, Base Connection, DIP, Long Term Stability, 5300 VRMS
SN74LVC14AD
Price: 0.18-0.32 USD
hex Schmitt-trigger inverter, TO252, -0.5 to 6.5V, 1.65 V to 3.6 V, Texas Instruments
TAJA105K035RNJ
Price: 0.1-100 USD
solid tantalum, chip capacitor, smd, 1μF, case sizes, 35V, Low profile
LMG9050ZZFC
Price: 1-2 USD
LMG9050ZZFC, Hitachi, TN LCD panel, 11 inch
1N4148
Price: 0.0026-0.003 USD
high-speed diode, DO35, 100V
SKKH132/16E
Price: 39-55.6 USD
thyristor/diode module, 137 A, 1.8 V, hard soldered joints, 1.6 mΩ
TLP285
Price: 0.12-0.6 USD
PHOTOTRANSISTOR 80V 4-MINIFLAT - TLP285
