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MFG:3000  Package Cooled:MIT  

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Part Number: M5M467800BTP

 

MFG: 3000

Package Cooled: MIT

 

Description: The M5M467400/465400BJ,BTP is organized 16777216-word by 4-bit, M5M467800/465800BJ,BTP is organized 83...


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M5M467800BTP General Description


The M5M467400/465400BJ,BTP is organized 16777216-word by 4-bit, M5M467800/465800BJ,BTP is organized 8388608-word by 8-bit, and M5M465160BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high  erformance CMOS process, and are suitable for large-capacity memory systems with high speed and low power dissipation.

The use of double-layer aluminum process combined with CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density. Multiplexed address inputs permit both a reduction in pins and an increase in system densities.

M5M467800BTP Maximum Ratings

Symbol Parameter Conditions Ratings Unit
Vcc Supply voltage With respect to Vss -0.5. 4.6 V
VI Input voltage -0.5. 4.6 V
V0 Output voltage -0.5. 4.6 V
I0 Output current   50 mA
Pd Power dissipation Ta=25 1000 mW
Topr Operating temperature   0. 70
Tstg Storage temperature   -65. 150

M5M467800BTP Connection Diagram

M5M467800BTP  Connection DiagramM5M467800BTP  Connection Diagram

M5M467800BTP datasheet

M5M467800BTP-6S
PDF/DataSheet Download

  • Datasheet: M5M467800BTP-6S
  • File Size: 371289 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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