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Part Number: M5M4V4S40CTP-15

 

 

 

 

Description: The M5M4V4S40CTP is a 2-bank x 131,072-word x 16-bit Synchronous DRAM, with LVTTL interface. All input...


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M5M4V4S40CTP-15 General Description


The M5M4V4S40CTP is a 2-bank x 131,072-word x 16-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V4S40CTP achieves very high speed data rates up to 83MHz, and is suitable for main memory or graphic memory in computer systems.

M5M4V4S40CTP-15 Maximum Ratings

Symbol

Parameter

Conditions

Ratings

Units

Vdd

Supply Voltage

with respect to Vss

-0.5 ~ 4.6

V

VddQ

Supply Voltage for Output

with respect to VssQ

-0.5 ~ 4.6

V

VI

Input Voltage

with respect to Vss

-0.5 ~ 5.5

V

VO

Output Voltage

with respect to VssQ

-0.5 ~ 4.6

V

IO

Output Current

 

50

mA

Pd

Power Dissipation

Ta = 25 °C

1000

mW

Topr

Operating Temperature

 

0 ~ 70

°C

Tstg

Storage Temperature

 

-65 ~ 150

°C

M5M4V4S40CTP-15 Features

- Single 3.3v±0.3v power supply
- Clock frequency 83MHz / 67MHz
- Fully synchronous operation referenced to clock rising edge
- Dual bank operation controlled by BA(Bank Address)
- /CAS latency- 1/2/3 (programmable)
- Burst length- 1/2/4/8/FP (programmable)
- Sequential and interleave burst (programmable)
- Byte control by DQMU and DQML
- Random column access
- Auto precharge / All bank precharge controlled by A8
- Auto and self refresh
- 1024 refresh cycles /16.4ms
- LVTTL Interface
- 400-mil, 50-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch

M5M4V4S40CTP-15 Connection Diagram

M5M4V4S40CTP-15  Connection Diagram

M5M4V4S40CTP-15 datasheet

M5M4V4S40CTP-15
PDF/DataSheet Download

  • Datasheet: M5M4V4S40CTP-15
  • File Size: 1493689 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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