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Part Number: M5M4V64S20ATP-12

 

 

 

 

Description: The M5M4V64S20ATP is a 4-bank x 4194304-word x 4-bit Synchronous DRAM, with LVTTL interface. All input...


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M5M4V64S20ATP-12 General Description


The M5M4V64S20ATP is a 4-bank x 4194304-word x 4-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S20ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory or graphic memory in computer systems.

M5M4V64S20ATP-12 Maximum Ratings

Symbol Parameter Conditions Ratings Unit
Vdd Supply Voltage with respect to Vss -0.5 ~ 4.6 V
VddQ Supply Voltage for Output with respect to VssQ -0.5 ~ 4.6 V
VI Input Voltage with respect to Vss -0.5 ~ Vdd+0.5 V
VO Output Voltage with respect to VssQ -0.5 ~ VddQ+0.5 V
IO Output Current   50 mA
Pd Power Dissipation Ta = 25 °C 1000 mW
Topr Operating Temperature   0 ~ 70 °C
Tstg Storage Temperature   -65 ~ 150 °C

M5M4V64S20ATP-12 Features

- Single 3.3v±0.3v power supply
- Fully synchronous operation referenced to clock rising edge
- 4 bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8 (programmable)
- Burst type- sequential / interleave (programmable)
- Column access - random
- Auto precharge / All bank precharge controlled by A10
- Auto refresh and Self refresh
- 4096 refresh cycles /64ms
- Column address A0-A9
- LVTTL Interface
- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch
- Clock frequency 125MHz / 100MHz / 83MHz

M5M4V64S20ATP-12 Connection Diagram

M5M4V64S20ATP-12  Connection Diagram

M5M4V64S20ATP-12 datasheet

M5M4V64S20ATP-12
PDF/DataSheet Download

  • Datasheet: M5M4V64S20ATP-12
  • File Size: 1124316 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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