Position: Home > Datasheet list > M5M Series > Index M > M5M4V64S40ATP-10
Electronica China

Purchase M5M4V64S40ATP-10, In-stock M5M4V64S40ATP-10 From SeekIC.

MFG:MIT  Package Cooled:TSOP  

M5M4V64S40ATP-10 Product Image

M5M Series Datasheet download

Five Points

Part Number: M5M4V64S40ATP-10

 

MFG: MIT

Package Cooled: TSOP

 

Description: The M5M4V64S40ATP is a 4-bank x 1048576-word x 16-bit Synchronous DRAM, with LVTTL interface. All inpu...


Urgent Purchase

M5M4V64S40ATP-10 General Description


The M5M4V64S40ATP is a 4-bank x 1048576-word x 16-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S40ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory or graphic memory in computer systems.

M5M4V64S40ATP-10 Maximum Ratings

Symbol Parameter Conditions Ratings Unit
Vdd Supply Voltage with respect to Vss -0.5 ~ 4.6 V
VddQ Supply Voltage for Output with respect to VssQ -0.5 ~ 4.6 V
VI Input Voltage with respect to Vss -0.5 ~ Vdd+0.5 V
VO Output Voltage with respect to VssQ -0.5 ~ VddQ+0.5 V
IO Output Current   50 mA
Pd Power Dissipation Ta = 25 °C 1000 mW
Topr Operating Temperature   0 ~ 70 °C
Tstg Storage Temperature   -65 ~ 150 °C

M5M4V64S40ATP-10 Features

- Single 3.3v±0.3v power supply
- Fully synchronous operation referenced to clock rising edge
- 4 bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/Full Page (programmable)
- Burst type- sequential / interleave (programmable)
- Column access - random
- Burst Write / Single Write (programmable)
- Auto refresh and Self refresh
- 4096 refresh cycles /64ms
- Column address A0-A7
- LVTTL Interface
- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch
- Clock frequency 125MHz /100MHz
- Auto precharge / All bank precharge controlled by A10

M5M4V64S40ATP-10 Connection Diagram

M5M4V64S40ATP-10  Connection Diagram

M5M4V64S40ATP-10 datasheet

M5M4V64S40ATP-10
PDF/DataSheet Download

  • Datasheet: M5M4V64S40ATP-10
  • File Size: 1110081 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

Find M5M4V64S40ATP-10 Suppliers

  • ·M5M1
  • ETC [ETC] 
  • MEDIUM CURRENT SILICON RECTIFIERS 
  • 183622 KB
  • M5M1 Datasheet Download
  • ·M5M27C202FP-12
  • MITSUBISHI [Mitsubishi Electric Semiconductor] 
  • 2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM  
  • 600293 KB
  • M5M27C202FP-12 Datasheet Download
  • ·M5M27C202FP-15
  • MITSUBISHI [Mitsubishi Electric Semiconductor] 
  • 2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM  
  • 600293 KB
  • M5M27C202FP-15 Datasheet Download
  • ·M5M27C202J-12
  • MITSUBISHI [Mitsubishi Electric Semiconductor] 
  • 2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM  
  • 600293 KB
  • M5M27C202J-12 Datasheet Download
  • ·M5M27C202J-15
  • MITSUBISHI [Mitsubishi Electric Semiconductor] 
  • 2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM  
  • 600293 KB
  • M5M27C202J-15 Datasheet Download
  • ·M5M27C202JK-10
  • MITSUBISHI [Mitsubishi Electric Semiconductor] 
  • 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 
  • 575919 KB
  • M5M27C202JK-10 Datasheet Download
  • ·M5M27C202JK-12
  • MITSUBISHI [Mitsubishi Electric Semiconductor] 
  • 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 
  • 575919 KB
  • M5M27C202JK-12 Datasheet Download
  • ·M5M27C202JK-12I
  • MITSUBISHI [Mitsubishi Electric Semiconductor] 
  • 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM  
  • 565302 KB
  • M5M27C202JK-12I Datasheet Download

M5M4V64S40ATP-10 Relative Products

  • M5M4V64S30ATP-8L

    M5M4V64S30ATP-8L

    The M5M4V64S30ATP is a 4-bank x 2097152-word x 8-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S30ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory o...

  • M5M4V64S30ATP-8A

    M5M4V64S30ATP-8A

    The M5M4V64S30ATP is a 4-bank x 2097152-word x 8-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S30ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory o...

  • M5M4V64S30ATP-8

    M5M4V64S30ATP-8

    The M5M4V64S30ATP is a 4-bank x 2097152-word x 8-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S30ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory o...

  • M5M4V64S30ATP-10L

    M5M4V64S30ATP-10L

    The M5M4V64S30ATP is a 4-bank x 2097152-word x 8-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S30ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory o...

  • M5M4V64S30ATP-10

    M5M4V64S30ATP-10

    The M5M4V64S30ATP is a 4-bank x 2097152-word x 8-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S30ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory o...

  • M5M4V64S20ATP-8L

    M5M4V64S20ATP-8L

    The M5M4V64S20ATP is a 4-bank x 4194304-word x 4-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S20ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory o...

Hotspot Suppliers Product

  • Models: PP20012HS
Price: 460-560 USD

    PP20012HS

    Price: 460-560 USD

    200A, 1200V, IGBT module

  • Models: AT45DB321D-TU
Price: 9.5-15.8 USD

    AT45DB321D-TU

    Price: 9.5-15.8 USD

    7-volt, serial-interface sequential access, Flash memory, -0.6V to +6.25V, TSSOP

  • Models: CV184-2APAG
Price: 1.25-1.5 USD

    CV184-2APAG

    Price: 1.25-1.5 USD

    CV184-2APAG, 1Kb Protected 1-Wire EEPROM, SSOP, Integrated Device

  • Models: ADM706RARZ-REEL
Price: 1-1.2 USD

    ADM706RARZ-REEL

    Price: 1-1.2 USD

    3 V, Voltage Monitoring uP Supervisory Circuit, 8SOIC

  • Models: SN74LV04ADR
Price: 0.1-0.15 USD

    SN74LV04ADR

    Price: 0.1-0.15 USD

    serial-in parallel-out shift register, DIP14, high speed, 74V, 8-Bit, 27 mA

  • Models: AT89C51-24JC
Price: 1-20 USD

    AT89C51-24JC

    Price: 1-20 USD

    CMOS 8-bit microcomputer, 24MHZ, 44-PLCC, 4K, -1.0V to +7.0V, 15.0 mA

  • Models: LLS1V153MELA
Price: 0.001-10 USD

    LLS1V153MELA

    Price: 0.001-10 USD

    15000UF, 35V, 20%, DIP , alumimum electrolytic capacitor, LLS1V153MELA

  • Models: MAX3072EESA+T
Price: 2.03-2.38 USD

    MAX3072EESA+T

    Price: 2.03-2.38 USD

    +3.3V, ±15kV ESD-Protected, Fail-Safe, Hot-Swap, RS-485/RS-422 Transceivers, SOP-8

  • Models: DP83848IVV
Price: 2.2-3 USD

    DP83848IVV

    Price: 2.2-3 USD

    Physical Layer device, 10/100 single port, -0.5 V to 4.2 V, Low power consumption, QFP-48

  • Models: SB20150CT
Price: 0.2-0.3 USD

    SB20150CT

    Price: 0.2-0.3 USD

    isolation schottky barrier rectifier, 20A, ITO-220AB, Low forwrd voltge, high current capability

  • Models: R5423N129C
Price: 0.001-5 USD

    R5423N129C

    Price: 0.001-5 USD

    R5423N129C, SOT, RICOH electronics devices division, Integrated Circuits

  • Models: RTR6500
Price: 2.3-3 USD

    RTR6500

    Price: 2.3-3 USD

    QFN, transceiver, 800 MHz, RF CMOS process technology, QUALCOMM

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All