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Part Number: M5M51008KR -55H
Description: The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit whic...
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M5M51008KR -55H
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DataSheet
General Description
M5M51008KR -55H General Description
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor TFT) load cells and CMOS periphery result in a high density and low power static RAM.
They are low standby current and low operation current and ideal for the battery back-up application.
The M5M51008CVP,RV,KV,KR are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). Two types of devices are available. M5M51008CVP,KV(normal lead bend type package), M5M51008CRV,KR(reverse lead bend type package).Using both types of devices, it becomes very easy to design a printed circuit board.
M5M51008KR -55H Maximum Ratings
| Symbol | Parameter | Conditions | Ratings | Unit |
| Vcc | Supply Voltage | With respect to GND | 0.3*~7 | V |
| VI | Input Voltage | 0.3*~Vcc + 0.3 | V | |
| VO | Output Voltage | 0~Vcc | V | |
| Pd | Power Dissipation | Ta = 25 °C | 700 | mW |
| Topr | Operating Temperature | 0~70 | °C | |
| Tstg | Storage Temperature | -65 ~ 150 | °C |
M5M51008KR -55H Features
Low stand-by current 0.1µA (typ.)
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S1,S2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
M5M51008CP ```````````` 32pin 600mil DIP
M5M51008CFP ```````````` 32pin 525mil SOP
M5M51008CVP,RV ```````````` 32pin 8 X 20 2mm TSOP
M5M51008CKV,KR ```````````` 32pin 8 X 13.4 2mm TSOP
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S1,S2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
M5M51008CP ```````````` 32pin 600mil DIP
M5M51008CFP ```````````` 32pin 525mil SOP
M5M51008CVP,RV ```````````` 32pin 8 X 20 2mm TSOP
M5M51008CKV,KR ```````````` 32pin 8 X 13.4 2mm TSOP
M5M51008KR -55H Typical Application
Small capacity memory units
M5M51008KR -55H Connection Diagram
M5M1
PDF/DataSheet Download
- Datasheet: M5M1
- File Size: 183622 KB
- Manufacturer: ETC [ETC]
- Click here to Download
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The M5M51008BP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density...
M5M51008FP-55HI
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS pe...
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The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor TFT) load cells and CMOS per...
M5M51008CP-55HI
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS pe...
M5M51008CP
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor TFT) load cells and CMOS per...
M5M51008BVP-70VL
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density a...
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