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Part Number: M5M51016BRT-12VL-I

 

 

 

 

Description: The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabr...


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M5M51016BRT-12VL-I General Description


The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.

They are low stand-by current and low operation current and ideal for the battery back-up application.

The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available.

M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

M5M51016BRT-12VL-I Maximum Ratings

Symbol
Parameter Conditions
Ratings
Unit
VCC
Supply voltage With respect to GND
0.3 ~ 4.6
V
V I
Input voltage
0.3* ~ Vcc + 0.3
V
VO
Output voltage
0 ~ Vcc
V
Pd
Power dissipation Ta=25°C
1
W
Topr
Operating temperature  
40 ~ 85
°C
Tstg
Storage temperature  
65 ~ 150
°C

M5M51016BRT-12VL-I Features

Single +3.0V power supply
Low stand-by current 0.3É A (typ.)
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by CS, BC1 & BC2
Data hold on +2V power supply
Three-state outputs : OR-tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package

M5M51016BRT-12VL-I Typical Application

Small capacity memory units

M5M51016BRT-12VL-I Connection Diagram

M5M51016BRT-12VL-I  Connection Diagram

M5M51016BRT-12VL-I datasheet

M5M51016BRT-12VL-I
PDF/DataSheet Download

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