MFG:MIT Package Cooled:TSSOP48
MFG: MIT
Package Cooled: TSSOP48
Description: The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabr...
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available.M5M51016BTP(normal lead bend type package), M5M51016BRT(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.
| Symbol | Parameter | Conditions | Ratings | Unit |
|
VCC |
Supply voltage |
With respect to GND | 0.3 ~ 4.6 | V |
| VI |
Input voltage |
0.3* ~ Vcc + 0.3 | V | |
| VO |
Output voltage |
0 ~ Vcc | V | |
|
Pd |
Power dissipation | Ta=25 |
1 |
W |
| Topr |
operating temperature |
40 ~ 85 | ||
|
Tstg |
Storage Temperature |
65 ~ 150 |
|
M5M51016BTP
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The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low p...
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low p...
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low p...
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low p...
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using highperformance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low po...
The M5M51008BP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density...
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