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Part Number: M5M51016BTPM5M51016BT
Description: The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabr...
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M5M51016BTPM5M51016BT
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DataSheet
General Description
M5M51016BTPM5M51016BT General Description
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of
resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.
M5M51016BTPM5M51016BT Maximum Ratings
| Symbol | Parameter | Conditions | Ratings | Unit |
| Vcc | Supply voltage | With respect to GND | 0.3 ~ 4.6 | V |
| VI | Input voltage | 0.3* ~ Vcc + 0.3 | V | |
| VO | Output voltage | 0 ~ Vcc | V | |
| Pd | Power dissipation | Ta=25oC |
1 | W |
| Topr | Operating temperature | 0 ~ 70 | oC | |
| Tstg | Storage temperature | 65 ~ 150 | oC |
M5M51016BTPM5M51016BT Features
| Type name | Access time (max) |
Power supply current | |
| Active (max) |
stand-by (max) | ||
| M5M51016BTP,RT-70L M5M51016BTP,RT-10L |
70ns 100ns |
30mA (1MHz) |
200A (VCC = 5.5V) |
| M5M51016BTP,RT-70LL M5M51016BTP,RT-10LL |
70ns 100ns |
40A (VCC = 5.5V) 0.3A (VCC = 3.0V,typ) | |
. Low stand-by current 0.3A (typ.)
. Directly TTL compatible : All inputs and outputs
. Easy memory expansion and power down by CS, BC1 & BC2
. Data hold on +2V power supply
. Three-state outputs : OR-tie capability
. OE prevents data contention in the I/O bus
. Common data I/O
. Package
.............................. M5M51016BTP,RT 44pin 400mil TSOP(II)
M5M51016BTPM5M51016BT Typical Application
Small capacity memory units
M5M51016BTPM5M51016BT Connection Diagram
M5M1
PDF/DataSheet Download
- Datasheet: M5M1
- File Size: 183622 KB
- Manufacturer: ETC [ETC]
- Click here to Download
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M5M51016BTPM5M51016BT Relative Products
M5M51016BTP
The M5M51016BTP are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (r...
M5M51016BRT-12VLL-I
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low p...
M5M51016BRT-12VL-I
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low p...
M5M51016BRT-10VLL-I
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low p...
M5M51016BRT-10VL-I
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low p...
M5M51016BRT
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using highperformance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low po...
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