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Part Number: M5M51016RT-10LL-I
Description: The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabr...
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M5M51016RT-10LL-I
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DataSheet
General Description
M5M51016RT-10LL-I General Description
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.
M5M51016RT-10LL-I Maximum Ratings
| Symbol | Parameter | Conditions | Ratings | Unit |
| Vcc | Supply voltage | With respect to GND | 0.3 ~ 7 | V |
| VI | Input voltage | 0.3* ~ Vcc + 0.3 | V | |
| VO | Output voltage | 0 ~ Vcc | V | |
| Pd | Power dissipation | Ta=25oC |
1 | W |
| Topr | Operating temperature | 40 ~ 85 | oC | |
| Tstg | Storage temperature | 65 ~ 150 | oC |
M5M51016RT-10LL-I Features
| Type name | Access time (max) |
Power supply current | |
| Active (max) |
stand-by (max) | ||
| M5M51016BTP,RT-70L M5M51016BTP,RT-10L |
70ns 100ns |
30mA (1MHz) |
200A (VCC = 5.5V) |
| M5M51016BTP,RT-70LL M5M51016BTP,RT-10LL |
70ns 100ns |
40A (VCC = 5.5V) 0.3A (VCC = 3.0V,typ) | |
. Low stand-by current 0.3A (typ.)
. Directly TTL compatible : All inputs and outputs
. Easy memory expansion and power down by CS, BC1 & BC2
. Data hold on +2V power supply
. Three-state outputs : OR-tie capability
. OE prevents data contention in the I/O bus
. Common data I/O
. Package
.............................. M5M51016BTP,RT 44pin 400mil TSOP(II)
M5M51016RT-10LL-I Typical Application
Small capacity memory units
M5M51016RT-10LL-I Connection Diagram
M5M51016RT-10LL-I
PDF/DataSheet Download
- Datasheet: M5M51016RT-10LL-I
- File Size: 81395 KB
- Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
- Click here to Download
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The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use ofresistive load NMOS cells and CMOS periphery result in a high density and low po...
M5M51016BTP
The M5M51016BTP are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (r...
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The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low p...
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The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low p...
M5M51016BRT-10VL-I
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low p...
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