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Description: The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-p...


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M5M51R16AWG -10HI General Description


The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM.

The M5M51R16AWG can achieve low stand-by current and low operation current and ideal for the battery back-up application.

The M5M51R16AWG is packaged in a 48-pin chip scale package which is a high reliability and high density surface mount device(SMD). Using this type of devices, it becomes very easy to design a small  system.

The M5M51R16AWG is fully compatible with the M5M51R16WG

M5M51R16AWG -10HI Maximum Ratings

Symbol Parameter Conditions Ratings Unit
Vcc Supply voltage With respect to GND -0.2 ~ 4.6 V
VI Input voltage -0.2* ~ Vcc+0.2(max.4.6V) V
Vo Output voltage 0 ~ Vcc V
Pd Power dissipation Ta=25°C 1 W
Topr Operating temperature   -40 ~ 85 °C
Tstg Storage temperature   -65 ~150 °C

M5M51R16AWG -10HI Features


• Single +1.8V~2.7V power supply
• Low power down current 0.05A(typ.)
• Directly TTL compatible : All inputs and outputs
• Easy memory expansion and power down by S,BC1 and BC2
• Data hold on +1.0V power supply
• Three-state outputs : OR-tie capability
• OE prevents data contention in the I/O bus
• Common data I/O
• Separate control of lower and upper bytes by BC1 and BC2
• Package
                48-pin chip scale package(CSP)
                Ball pitch : 0.75mm
                Package size: 7.0mm x 8.5mm

M5M51R16AWG -10HI Typical Application

Small capacity memory units.

M5M51R16AWG -10HI datasheet

M5M1
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