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Part Number: M5M51R16AWG -10L
Description: The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-p...
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M5M51R16AWG -10L
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General Description
M5M51R16AWG -10L General Description
The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM.
The M5M51R16AWG can achieve low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51R16AWG is packaged in a 48-pin chip scale package which is a high reliability and high density surface mount device (SMD). Using this type of devices, it becomes very easy to design a small system.
The M5M51R16AWG is fully compatible with the M5M51R16WG
M5M51R16AWG -10L Maximum Ratings
| Symbol | Parameter | Conditions | Ratings | Unit |
| Vcc | Supply voltage | With respect to GND | -0.2 ~ 4.6 | V |
| VI | Input voltage | -0.2* ~ Vcc+0.2(max.4.6V) | V | |
| Vo | Output voltage | 0 ~ Vcc | V | |
| Pd | Power dissipation | Ta=25°C | 1 | W |
| Topr | Operating temperature | 0 ~ 70 | °C | |
| Tstg | Storage temperature | -65 ~150 | °C |
* -1.0V in case of AC ( Pulse width 30ns )
M5M51R16AWG -10L Features
• Single +1.8V~2.7V power supply
• Low power down current 0.05A(typ.)
• Directly TTL compatible : All inputs and outputs
• Easy memory expansion and power down by S,BC1 and BC2
• Data hold on +1.0V power supply
• Three-state outputs : OR-tie capability
• OE prevents data contention in the I/O bus
• Common data I/O
• Separate control of lower and upper bytes by BC1 and BC2
• Package
48-pin chip scale package(CSP)
Ball pitch : 0.75mm
Package size: 7.0mm x 8.5mm
M5M51R16AWG -10L Typical Application
Small capacity memory units.
M5M1
PDF/DataSheet Download
- Datasheet: M5M1
- File Size: 183622 KB
- Manufacturer: ETC [ETC]
- Click here to Download
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The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM.The M5M51R16AWG can achi...
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