MFG:MIT Package Cooled:DIP28
MFG: MIT
Package Cooled: DIP28
Description: The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is...
The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use ofresistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface.
Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.
| Symbol | Parameter | Conditions | Ratings | Unit |
| Vcc | Supply voltage | With respect to GND | -0.3*~7.0 | V |
| VI | Input voltage | -0.3*~Vcc+0.3 (Max 7.0) |
V | |
| VO | Output voltage | 0~Vcc | V | |
| Pd | Power dissipation | Ta=25°C | 700 | mW |
| Topr | Operating temperature | -20~70 | °C | |
| Tstg | Storage temperature | -65~150 | °C |
M5M5256DP
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The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power...
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