MFG:Other Category:Other
Category: Other
MFG: Other
Description: The M5M5256KP is a type of 262,144-bit CMOS static RAMs, which is organized as 32,768-words by 8-bits. The use of resisti...
The M5M5256KP is a type of 262,144-bit CMOS static RAMs, which is organized as 32,768-words by 8-bits. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre nt is small enough for battery back-up application. It is suitable for the memory systems which need simple interface.
Features of M5M5256KP are: (1)single +5V power supply; (2)no clocks, no refresh; (3)data-hold on +2.0V power sup ply; (4)directly TTL compatible : all inputs and outputs; (5)three-state outputs : OR-tie capability; (6)/OE prevents da ta contention in the I/O bus; (7)common Data I/O; (8)battery backup capability; (9)low stand-by current: 0.05uA(ty p).
The absolute maximum ratings and electrical characteristics of the M5M5256DVP can be summarized as:(1)supply vo ltage(with respect to GND): -0.3V to 7.0V; (2)input voltage(with respect to GND):-0.3V to Vcc+0.3V; (3)output volta ge(with respect to GND): 0V to Vcc; (4)power dissipation(Ta=25): 700mW; (5)operating temperature:-40 to 85 ; (6)storage temperature:-65 to 150. Electrical characteristics:(1)high level input voltage: 2.2V min and Vcc+0. 3V max; (2)low level input voltage:-0.3V min and 0.8V max; (3)input current(VI=0~Vcc):±1uA; (4)high level output voltage(IOH=-1mA): 2.4V min; (5)low level output voltage(IOL=2mA): 0.4V max, etc.
M5M5256KP
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The M5M5256DVP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices...
The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use ofresistive load NMOS cells and CMOS periphery results in a high density and low p...
The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use ofresistive load NMOS cells and CMOS periphery results in a high density and low p...
The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power...
The M5M5256CP-85LL is a 262144-bit CMOS static RAMs organized as 32768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology.The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power sta...
The M5M5256CFP-70LL is a 262144-bit CMOS static RAMs organized as 32768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology.The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power st...
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