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Description: The M5M5T5636UG is a family of 18M bit synchronous SRAMs organized as 524288-words by 36-bit. It is de...


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M5M5T5636UG 25 General Description


The M5M5T5636UG is a family of 18M bit synchronous SRAMs organized as 524288-words by 36-bit. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Mitsubishi's SRAMs are fabricated with high performance, low power CMOS technology, providing greater reliability. M5M5T5636UG operates on 2.5V power/ 1.8V I/O supply or a single 2.5V power supply and are 2.5V CMOS compatible.

M5M5T5636UG 25 Maximum Ratings

Symbol
Parameter
Conditions
Ratings
Unit
VDD
Power Supply Voltage
With respect to VSS
-2.0*~3.6
V
VDDQ
I/O Buffer Power Supply Voltage
-2.0*~3.6
V
VI
Input Voltage
-1.0~VDDQ+1.0*
V
VO
Output Voltage
-1.0~VDDQ+1.0*
V
PD
Maximum Power Dissipation (VDD)
 
1050
mW
TOPR
Operating Temperature  
0~70
TSTG(bias)
Storage Temperature(bias)
 
-10~85
Tstg
Storage Temperature
 
-65~150
Note16.* This is 1.0V~VDDQ+1.0V when pulse width2ns, and 0.5V in case of DC.
            ** This is 1.0V~VDDQ+1.0V when pulse width2ns, and 0.5V~VDDQ+0.5V in case of DC.

M5M5T5636UG 25 Features

• Fully registered inputs and outputs for pipelined operation
• Fast clock speed: 250, 225, and 200 MHz
• Fast access time: 2.6, 2.8, 3.2 ns
• Single 2.5V -5% and +5% power supply VDD
• Separate VDDQ for 2.5V or 1.8V I/O
• Individual byte write (BWa# - BWd#) controls may be tied LOW
• Single Read/Write control pin (W#)
• CKE# pin to enable clock and suspend operations
• Internally self-timed, registers outputs eliminate the need to control G#
• Snooze mode (ZZ) for power down
• Linear or Interleaved Burst Modes
• Three chip enables for simple depth expansion
• JTAG boundary scan support

M5M5T5636UG 25 Typical Application

High-end networking products that require high bandwidth, such as switches and routers.

M5M5T5636UG 25 datasheet

M5M1
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