Package Cooled:TSSOP/32 D/C:01+
Package Cooled: TSSOP/32
D/C: 01+
Description: The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are&nb...
The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology.The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM.
They are low standby current and low operation current and ideal for the battery back-up application.
The M5M5V108DVP,KV are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD).
| Symbol | Parameter | Conditions | Ratings | Unit |
| Vcc | Supply voltage |
With respect to GND | 0.3*~4.6 | V |
| VI |
Input voltage | 0.3*~Vcc + 0.3 (Max 4.6) |
V | |
| VO | Output voltage | 0~Vcc | V | |
| Pd |
Power dissipation | Ta=25 | 700 | mW |
| Topr | Operating temperature | 0~70 | ||
| Tstg | Storage temperature | 65~150 |
M5M5V108DVP-70H
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The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology.The use of thin film transistor (TFT) load cells and CMOS periphery resul...
IC SRAM 1MBIT 70NS 32SOP
The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology.The use of thin film transistor (TFT) load cells and CMOS periphery resul...
The M5M5T5636UG is a family of 18M bit synchronous SRAMs organized as 524288-words by 36-bit. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Mitsubishi's SRAMs are fabricated with high p...
The M5M5T5636UG is a family of 18M bit synchronous SRAMs organized as 524288-words by 36-bit. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Mitsubishi's SRAMs are fabricated with high p...
The M5M5T5636UG is a family of 18M bit synchronous SRAMs organized as 524288-words by 36-bit. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Mitsubishi's SRAMs are fabricated with high p...
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