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Part Number: M5M5W816WG-10LI
Description: The M5M5W816 is a family of low voltage 8-Mbit static RAMs organized as 524288-words by 16-bit, fabric...
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M5M5W816WG-10LI
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General Description
M5M5W816WG-10LI General Description
The M5M5W816 is a family of low voltage 8-Mbit static RAMs organized as 524288-words by 16-bit, fabricated by Mitsubishi's high-performance 0.18µm CMOS technology.
The M5M5W816 is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives.
M5M5W816WG is packaged in a CSP (chip scale package), with the outline of 7.0mm x 8.5mm, ball matrix of 6 x 8 (48ball) and ball pitch of 0.75mm. It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards.
From the point of operating temperature, the family is divided into two versions; "Standard" and "I-version".
M5M5W816WG-10LI Maximum Ratings
| Symbol | Parameter | Conditions | Ratings | Units |
| Vcc | Supply voltage | With respect to GND | -0.5* ~ +4.6 | V |
| VI | Input voltage | With respect to GND | -0.2* ~ Vcc + 0.2 (max. 4.6V) | |
| VO | Output voltage | With respect to GND | 0 ~ Vcc | |
| Pd | Power dissipation | Ta=25 | 700 | mW |
| Ta | Operating temperature |
Standard (-L, -H) | 0 ~ +70 | °C |
| I-version (-LI, -HI) | - 40 ~ +85 | |||
| Tstg | Storage temperature | - 65 ~ +150 | °C |
M5M5W816WG-10LI Features
Single 1.8~2.7V power supply
Small stand-by current: 0.1µA (2.7V, typ.)
No clocks, No refresh
Data retention supply voltage =1.0V
All inputs and outputs are TTL compatible.
Easy memory expansion by S1, S2, BC1 and BC2
Common Data I/O
Three-state outputs: OR-tie capability
OE prevents data contention in the I/O bus
Process technology: 0.18µm CMOS
Package: 48ball 7.0mm x 8.5mm CSP
Small stand-by current: 0.1µA (2.7V, typ.)
No clocks, No refresh
Data retention supply voltage =1.0V
All inputs and outputs are TTL compatible.
Easy memory expansion by S1, S2, BC1 and BC2
Common Data I/O
Three-state outputs: OR-tie capability
OE prevents data contention in the I/O bus
Process technology: 0.18µm CMOS
Package: 48ball 7.0mm x 8.5mm CSP
M5M5W816WG-10LI Connection Diagram
M5M5W816WG-10LI
PDF/DataSheet Download
- Datasheet: M5M5W816WG-10LI
- File Size: 89299 KB
- Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
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M5M5W816WG-10LI Relative Products
M5M5W816WG-10L
The M5M5W816 is a family of low voltage 8-Mbit static RAMs organized as 524288-words by 16-bit, fabricated by Mitsubishi's high-performance 0.18µm CMOS technology.The M5M5W816 is suitable for memory applications where a simple interfacing , battery ope...
M5M5W816WG-10HI
The M5M5W816 is a family of low voltage 8-Mbit static RAMs organized as 524288-words by 16-bit, fabricated by Mitsubishi's high-performance 0.18µm CMOS technology.The M5M5W816 is suitable for memory applications where a simple interfacing , battery ope...
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The M5M5W816 is a family of low voltage 8-Mbit static RAMs organized as 524288-words by 16-bit, fabricated by Mitsubishi's high-performance 0.18µm CMOS technology.The M5M5W816 is suitable for memory applications where a simple interfacing , battery ope...
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The M5M5W816TP is a f amily of low v oltage 8-Mbit static RAMs organized as 524288-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.18µm CMOS technology .The M5M5W816TP is suitable f or memory applications where a simple interf acing , ...
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The M5M5W816TP is a f amily of low v oltage 8-Mbit static RAMs organized as 524288-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.18µm CMOS technology .The M5M5W816TP is suitable f or memory applications where a simple interf acing , ...
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The M5M5W416C is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.18m CMOS technology .The M5M5W416C is suitable f or memory applications where a simple interf acing , battery o...
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