MFG:DIP Package Cooled:MIT D/C:96+
MFG: DIP
Package Cooled: MIT
D/C: 96+
Description: The M66252P/FP is a high-speed line memory with a FIFO(First In First Out) structure of 1152-word
The M66252P/FP is a high-speed line memory with a FIFO(First In First Out) structure of 1152-word × 8-bit configuration which uses high-performance silicon gate CMOS process technology.
It has separate clock, enable and reset signals for write and read and is most suitable as a buffer memory between
devices with different data processing throughput.
|
Symbol |
Parameter |
Conditions |
Rating |
Unit |
| Vcc | Supply voltage |
Reference pin: GND |
-0.5to+7.0 |
V |
| VI | Input voltage |
0.5 toVcc+0.5 |
V | |
| Vo | Output voltage |
0.5 toVcc+0.5 |
V | |
| Pd | Power dissipation | Ta = 25°C |
550(Note 1) |
mW |
| Tstg | Storage temperature |
-65 to +150 |
°C |
Note 1: Ta 62°C are derated at 8.8mW/°C (24P4Y)
Ta 51°C are derated at 7.5mW/°C (24P2W)
M66252P
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The M66252P/FP is a high-speed line memory with a FIFO(First In First Out) structure of 1152-word × 8-bit configuration which uses high-performance silicon gate CMOS process technology.The M66252P/FP has separate clock, enable and reset signals for write and...
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