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Description: The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash me...


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M6MGB General Description


The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 4M-bits Static RAM in a 72-pin S-CSP.

16M-bits Flash memory is a 1,048,576 words, 3.3V-only, and high performance non-volatile memory fabricated by
CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell.

4M-bits SRAM is a 262,144words unsynchronous SRAM fabricated by silicon-gate CMOS technology.

M6MGB/T166S4BWG is suitable for the application of the mobile-communication-system to reduce both the mount
space and weight .

M6MGB Maximum Ratings

Symbol Parameter Conditions Min Max Unit
F-Vcc Flash Vcc voltage With respect to Ground -0.2 4.6 V
VI1 All input or output voltage 1) -0.6 4.6 V
Ta Ambient temperature   -40 85
Tbs Temperature under bias   -50 95
Tstg Storage temperature   -65 125
IOUT Output short circuit current     100 mA

1) Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for  eriods <20ns. Maximum DC voltage on input/output pins is (F-VCC)+0.5V which, during transitions, may overshoot to (F-VCC)+1.5V for periods <20ns.

M6MGB Features

·Access time Flash Memory 90ns (Max.)
·SRAM 85ns (Max.)   Supply voltage Vcc=2.7 ~ 3.6V
·Ambient temperature I version Ta=-40 ~ 85°C
·Package : 72-pin S-CSP , 0.8mm ball pitch

M6MGB Typical Application

Mobile communication products

M6MGB datasheet

M6MGB
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