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MFG:ADI D/C:09
Part Number: MAT03
MFG: ADI
D/C: 09
Description: The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency perfo...
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MAT03
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DataSheet
General Description
MAT03 General Description
The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/ÖHz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 mV max), makes the MAT03 an excellent choice for demanding preamplifier applications. Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 W) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance.
Each transistor is individually tested to data sheet specifications. Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges. To insure the longterm stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse baseemitter junction potential. This prevents a base-emitter breakdown condition which can result in degradation of gain and matching performance due to excessive breakdown current.
MAT03 Maximum Ratings
Collector-Base Voltage (BVCBO) . . . . . . . . . . . . . . . . . . . 36 V
Collector-Emitter Voltage (BVCEO) . . . . . . . . . . . . . . . . . .36 V
Collector-Collector Voltage (BVCC) . . . . . . . . . . . . . . . . . .36 V
Emitter-Emitter Voltage (BVEE) . . . . . . . . . . . . . . . . . . . . 36 V
Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Emitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Total Power Dissipation
Ambient Temperature £ 70°C2 . . . . . . . . . . . . . . . . . .500 mW
Operating Temperature Range
MAT03A . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C to +125°C
MAT03E/F . . . . . . . . . . . . . . . . . . . . . . . . . . .40°C to +85°C
Operating Junction Temperature . . . . . . . . 55°C to +150°C
Storage Temperature . . . . . . . . . . . . . . . . .65°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . .+300°C
Junction Temperature . . . . . . . . . . . . . . . . .65°C to +150°C
NOTES
1Absolute maximum ratings apply to both DICE and packaged devices.
2Rating applies to TO-78 not using a heat sink, and LCC; devices in free
air only. For TO-78, derate linearly at 6.3 mW/°C above 70°C ambient
temperature; for LCC, derate at 7.8 mW/°C.
Collector-Emitter Voltage (BVCEO) . . . . . . . . . . . . . . . . . .36 V
Collector-Collector Voltage (BVCC) . . . . . . . . . . . . . . . . . .36 V
Emitter-Emitter Voltage (BVEE) . . . . . . . . . . . . . . . . . . . . 36 V
Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Emitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Total Power Dissipation
Ambient Temperature £ 70°C2 . . . . . . . . . . . . . . . . . .500 mW
Operating Temperature Range
MAT03A . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C to +125°C
MAT03E/F . . . . . . . . . . . . . . . . . . . . . . . . . . .40°C to +85°C
Operating Junction Temperature . . . . . . . . 55°C to +150°C
Storage Temperature . . . . . . . . . . . . . . . . .65°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . .+300°C
Junction Temperature . . . . . . . . . . . . . . . . .65°C to +150°C
NOTES
1Absolute maximum ratings apply to both DICE and packaged devices.
2Rating applies to TO-78 not using a heat sink, and LCC; devices in free
air only. For TO-78, derate linearly at 6.3 mW/°C above 70°C ambient
temperature; for LCC, derate at 7.8 mW/°C.
MAT03 Features
·Dual Matched PNP Transistor
·Low Offset Voltage: 100 mV max
·Low Noise: 1 nV/ÖHz @ 1 kHz max
·High Gain: 100 min
·High Gain Bandwidth: 190 MHz typ
·Tight Gain Matching: 3% max
·Excellent Logarithmic Conformance: rBE . 0.3 V typ
·Available in Die Form
·Low Offset Voltage: 100 mV max
·Low Noise: 1 nV/ÖHz @ 1 kHz max
·High Gain: 100 min
·High Gain Bandwidth: 190 MHz typ
·Tight Gain Matching: 3% max
·Excellent Logarithmic Conformance: rBE . 0.3 V typ
·Available in Die Form
MAT03
PDF/DataSheet Download
- Datasheet: MAT03
- File Size: 260172 KB
- Manufacturer: AD [Analog Devices]
- Click here to Download
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- ·MAT01N
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- ·MAT02
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