MG15C4MNI

The MG15C4MNI is desiged as semiconductor by the toshiba corporation.

Some absolute maximum ratings of MG15C4MNI have been concluded into several points as follow. (1)Its drain to source voltage would be 150V. (2)Its gate to source voltage would be +/-20V. (3)Its drain current DC would be +/-15A. (4)Its drain current pulse would be +/-30A. (5)Its drain power dissipation would be 65W. (6)Its channel temperature would be 150°C. (7)Its storage temperature range would be from -40°C to 125°C. (8)Its isolation voltage would be 2500V. (9)Its screw torque would be 30Kg.cm. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of MG15C4MNI are concluded as follow. (1)Its gate leakage current would be max +/-100mA with test conditios of Vgs=+/-20V and Vds=0. (2)Its drain cutoff current would be max 1.0mA with test conditions of Vds=150V and Vgs=0. (3)Its drain to sourc breakdown voltage would be min 150V with test conditions if Id=10mA and Vgs=0. (4)Its gate threshold voltage would be min 1.5V and max 3.5V with test conditions of Vds=10V and Id=1mA. (5)Its forward transfer admittance would be min 4.0S and typ 7.0S with Vds=10V and Id=15A. (6)Its drain to source ON resistance would be typ 0.15ohms and max 0.22ohms with test conditions of Id=15A and Vgs=10V. (7)Its source drain forward voltage would be typ 1.3V and max 1.8V. (8)Its input capacitance would be typ 1300pF. (9)Its rise time would be typ 400ns and max 800ns. (10)Its turn-on time would be typ 500ns and max 1000ns. (11)Its fall time would be typ 100ns and max 200ns. (12)Its turn-off time would be typ 300ns and max 600ns. (13)Its reverse recovery time would be typ 200ns and max 400ns. If you have any question or suggestion or want to know more information about MG15C4MNI please contact us for details. Thank you!