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Part Number: MGF431xG
Description: The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L t...
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MGF431xG
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DataSheet
General Description
MGF431xG General Description
The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers.
The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.
MGF431xG Maximum Ratings
| Parameter |
Symbol |
Ratings |
Unit |
| Gate to drain voltage |
VGDO |
-4 |
V |
| Gate to source voltage |
VGSO |
-4 |
V |
| Drain current |
ID |
60 |
mA |
| Total power dissipation *1 |
PT |
50 |
mW |
| Channel temperature |
Tch |
175 |
°C |
| Storage temperature |
Tstg |
65 /+175 |
°C |
MGF431xG Features
·Low noise figure @ f=12GHz
·MGF4316G : NF min.=0.80dB (MAX.)
·MGF4319G : NF min.=0.50dB (MAX.)
·High associated gain
·Gs=12.0 dB (MIN.) @ f=12GHz
·MGF4316G : NF min.=0.80dB (MAX.)
·MGF4319G : NF min.=0.50dB (MAX.)
·High associated gain
·Gs=12.0 dB (MIN.) @ f=12GHz
MGF431xG Typical Application
·L to K band low noise amplifiers.
MGF431XG
PDF/DataSheet Download
- Datasheet: MGF431XG
- File Size: 34475 KB
- Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
- Click here to Download
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MGF431xG Relative Products
MGF2445A
MGF2430A
MGF2415A
MGF2407A
MGF1954A
The MGF1954A is designed for use in S to Ku band power amplifiers.The lead-less ceramic package assures minimum parasitic losses.
MGF1953A
The MGF1953A is designed for use in S to Ku band power amplifiers.The lead-less ceramic package assures minimum parasitic losses.
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