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Part Number: MGF491xG

 

 

 

 

Description: The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L t...


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MGF491xG General Description


The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers.

The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits.

The MGF491*G series is mounted in the super 12 tape.

MGF491xG Maximum Ratings

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-4
V
Gate to source voltage
VGSO
-4
V
Drain current
ID
60
mA
Total power dissipation *1
PT
50
mW
Channel temperature
Tch
175
°C
Storage temperature
Tstg
65 /+175
°C

MGF491xG Features

• Low noise figure @f=12GHz MGF4916G:NFmin.=0.80dB(MAX.) MGF4919G:NFmin.=0.50dB(MAX.)
• High associated gain @f=12GHz Gs=12.0dB(MIN.)

MGF491xG Typical Application

·L to Ku band low noise amplifiers.

MGF491xG datasheet

MGF491XG
PDF/DataSheet Download

  • Datasheet: MGF491XG
  • File Size: 19808 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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