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MFG:MIT  Package Cooled:98+  D/C:150  

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Part Number: MGF4714CP

 

MFG: MIT

Package Cooled: 98+

D/C: 150

Description: The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band am...


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MGF4714CP General Description


The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circuits.

The MGF4714CP is mounted in Super 12 tape.

MGF4714CP Maximum Ratings

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-4
V
Gate to source voltage
VGSO
-4
V
Drain current
ID
60
mA
Total power dissipation *1
PT
50
mW
Channel temperature
Tch
125
°C
Storage temperature
Tstg
65 /+125
°C

MGF4714CP Features

• Low noise figure NFmin.=1.00dB(MAX.) @f=12GHz
• High associated gain Gs=11.0dB(MIN.) @f=12GHz

MGF4714CP Typical Application

·L to Ku band low noise amplifiers.

MGF4714CP datasheet

MGF4714CP
PDF/DataSheet Download

  • Datasheet: MGF4714CP
  • File Size: 18186 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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