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MGP15N40CL

IGBT Transistors 15A 410V Ignition

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SeekIC No. : 00144021 Detail

MGP15N40CL: IGBT Transistors 15A 410V Ignition

MGP15N40CL Data Sheet

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Part Number:
MGP15N40CL
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/9

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 440 V
Collector-Emitter Saturation Voltage : 10 V Maximum Gate Emitter Voltage : 22 V
Gate-Emitter Leakage Current : 150 W Power Dissipation : 150 W
Maximum Operating Temperature : + 150 C Package / Case : TO-220-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 440 V
Power Dissipation : 150 W
Package / Case : TO-220-3
Maximum Gate Emitter Voltage : 22 V
Gate-Emitter Leakage Current : 150 W
Collector-Emitter Saturation Voltage : 10 V


Specifications

Rating Symbol Value Unit
CollectorEmitter Voltage VCES CLAMPED Vdc
CollectorGate Voltage VCGR CLAMPED Vdc
GateEmitter Voltage VGE CLAMPED Vdc
Collector Current - Continuous IC 15
 Adc
Apk
Total Power Dissipation @ TC = 25°C
 PD 136
0.91		 Watts
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg 55 to 175 °C
Single Pulse CollectortoEmitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, PEAK IL = 14.2 A, L = 3.0 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, PEAK IL = 10 A, L = 3.0 mH, Starting TJ = 150°C		 EAS 300
150		 mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
RqJC
RqJA		 1.1
62.5		 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds TL 260 °C



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