Purchase MH1099E, In-stock MH1099E From SeekIC.
Part Number: MH1099E
Description: The MH1RT Series Gate Array and Embedded Array families from TEMIC are fabricated on a radiation tolerant 0.35
- Table of contents:
MH1099E
-
Suppliers
DataSheet
General Description
MH1099E General Description
The MH1RT Series Gate Array and Embedded Array families from TEMIC are fabricated on a radiation tolerant 0.35 CMOS process, with up to 4 levels of metal for interconnect. This family features arrays with up to 1.6 million routable gates and 596 pins. The high density and high pin count capabilities of the MH1RT family, coupled with the ability to embed cores, or memory on the same silicon, makes the MH1RT series of arrays an ideal choice for System Level Integration.
The MH1RT series is supported by an advance software environment based on industry standards linking proprietary and commercial tools. Verilog, DFT, Sysnopsys and Vital are the reference front end tools. Floor planning associated with timing driven layout provides a short back end cycle.
The MH1RT series comes as a dual use of the MH1 series, adding:
through process changes, the 100 MeV latch up immunity and the 200Krads+ total dose capability as required by most of the space programs,
through cells relayout, an SEU immunity allowing to SEU harden only where it is actually necessary with respect to function requirements.
The MH1RT series comes as the TEMIC 7 th generation of ASIC series designed for radiation hardened applications in a 15 years time frame.
It is also made available to any of the currently available quality grades: commercial, industrial, automotive, military and space.
MH1099E Maximum Ratings
Operating Ambient
Temperature -55°C to +125°C
Storage Temperature -65°C to +150°C
Maximum Input Voltage:
Inputs VDD +0.5V
5V tolerant VDD5 +0.5V
Maximum Operating Voltage 3.6V
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Temperature -55°C to +125°C
Storage Temperature -65°C to +150°C
Maximum Input Voltage:
Inputs VDD +0.5V
5V tolerant VDD5 +0.5V
Maximum Operating Voltage 3.6V
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
MH1099E Features
High Speed - 180 ps Gate Delay - 2 input NAND, FO=2 (nominal)
Up to 1.198 M Used Gates and 512 Pins with 3.3 V, 3 V and 2.5 V Libraries when tested to space quality grades
Up to 1.6M Used Gates and 596 Pins with 3.3 V, 3 V and 2.5 V Libraries when tested to mil quality grades
System Level Integration Technology Cores on request:
` MEMORY: SRAMs, TPRAMs and FIFOs; Gate Level or Embedded, with EDACS
I/O Interfaces:
` CMOS, LVTTL, LVDS - Output Currents up to 24 mA, 5V Tolerant and compliant I/O
` cold sparing buffers (2 microA max. leakage current @ 3.6V worst case mil temp.)
300 MHz PLL, 260 MHz LVDS and 800 MHz max toggle frequency @ 3.3 V
Deep Submicron CAD Flow
Latch up immune and 200+ Krads total dose capability
SEU free cell
QML Q and V certification pending
Up to 1.198 M Used Gates and 512 Pins with 3.3 V, 3 V and 2.5 V Libraries when tested to space quality grades
Up to 1.6M Used Gates and 596 Pins with 3.3 V, 3 V and 2.5 V Libraries when tested to mil quality grades
System Level Integration Technology Cores on request:
` MEMORY: SRAMs, TPRAMs and FIFOs; Gate Level or Embedded, with EDACS
I/O Interfaces:
` CMOS, LVTTL, LVDS - Output Currents up to 24 mA, 5V Tolerant and compliant I/O
` cold sparing buffers (2 microA max. leakage current @ 3.6V worst case mil temp.)
300 MHz PLL, 260 MHz LVDS and 800 MHz max toggle frequency @ 3.3 V
Deep Submicron CAD Flow
Latch up immune and 200+ Krads total dose capability
SEU free cell
QML Q and V certification pending
MH1
PDF/DataSheet Download
- Datasheet: MH1
- File Size: 289975 KB
- Manufacturer: Atmel
- Click here to Download
- ·MH101
- ETC [ETC]
- High Dynamic Range MMIC Mixer
- 158703 KB
- ·MH101-PCB
- ETC [ETC]
- High Dynamic Range MMIC Mixer
- 158703 KB
- ·MH102
- ETC [ETC]
- High Dynamic Range MMIC Mixer
- 165915 KB
- ·MH102-PCB
- ETC [ETC]
- High Dynamic Range MMIC Mixer
- 165915 KB
- ·MH103A
- ETC [ETC]
- High Dynamic Range UMTS-Band MMIC Mixer
- 356718 KB
- ·MH103A-G
- ETC [ETC]
- High Dynamic Range UMTS-Band MMIC Mixer
- 356718 KB
- ·MH103A-PCB
- ETC [ETC]
- High Dynamic Range UMTS-Band MMIC Mixer
- 356718 KB
- ·MH11
- MOSPEC [Mospec Semiconductor]
- HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)
- 138244 KB
MH1099E Relative Products
MH1099
The MH1 Series Gate Array and Embedded Array families from TEMIC are fabricated in a 0.35m CMOS process, with up to 3 levels of metal. This family features arrays with up to 1.6 million routable gates and 600 pins. The high density and high pin count capabil...
MH103A
The MH103A is a passive GaAs MESFET mixer that provides high dynamic range performance in a low-cost lead-free/green/RoHS-compliant SOIC-8 package. WJ's MH103A uses patented techniques to realize +34 dBm Input IP3 at an LO drive level of +17 dBm.This MH103As...
MH101
The MH101 is a passive GaAs MESFET mixer that provides high dynamic range performance in a low cost SOIC-8 package. WJ's MH101 uses patented techniques to realize greater than +30 dBm Input IP3 at an LO drive level of +17 dBm.This MH101 single monolithic int...
MH100
MH0810C
MH0810B
Hotspot Suppliers Product
M11B416256A-35T
Price: 0.5-1.5 USD
256K x 16, DRAM EDO PAGE MODE, TSOP, Single 5V power supply, JEDEC standard pinout
CY7C1041-15VI
Price: 1.8-2.3 USD
SOJ44, CMOS static RAM, 15 ns tAA, 430 mW, 400 μW at 2.0V retention
88E6065B-LAJ1
Price: 1-50 USD
88E6065B-LAJ1, Integrated Circuits, QFP, Marvell Technology Group
UPD431000ACZ-70LL
Price: 0.001-0.01 USD
1M-bit(128K-word x 8-bit), Low power SRAM, QFP144, –0.5 to +7.0 V, high speed
IRF9540NPBF
Price: 0.42-0.68 USD
HEXFET power MOSFET, TO220, 6V, advanced process technology
LTC4054ES5-4.2
Price: 0.6-0.8 USD
Standalone, Linear Li-Ion Battery Charger, TSOT23-5, C/10 Charge Termination, 25μA Supply Current
NCP1014AP065G
Price: 0.048-0.052 USD
Monolithic Switcher, DIP, 1.0 ms Soft Start
AD73360LARZ
Price: 1.5-1.8 USD
six-input channel, analog front-end processor, 28-Lead SOIC
MX581KCSA
Price: 3.85-4.3 USD
voltage reference, SOP8, -0.3 to 40V
KSD1408YTU
Price: 0.2-1.5 USD
NPN Epitaxial Silicon Transistor, 80V, 4A, TO-220F, 25 W, 100 μA
UPD75P116GF-3BE
Price: 9-13 USD
UPD75P116GF-3BE NEC Electronics 4-BIT SINGLE-CHIP MICROCOMPUTER
SAA7111AH
Price: 5-6 USD
Enhanced Video Input Processor (EVIP), two-channel analog preprocessing circuit, 3.3 V CMOS circuit
