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Description: The MH64S72QJA is 67108864 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six ind...


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MH64S72QJA -8 General Description


The MH64S72QJA is 67108864 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 32M x 4 Sy nchronous DRAMs in TSOP.

The stacked structure of TSOP on a card edge dual inline package prov ides any application where high densities and large of quantities memory are required.

This is a socket-ty pe memory module ,suitable f or easy interchange or addition of module.

MH64S72QJA -8 Maximum Ratings

Symbol
Parameter
Conditions
Ratings
Unit
Vdd
Supply Voltage
With respect to Vss
-0.5 ~ 4.6
V
VI
Input Voltage
With respect to Vss
-0.5 ~ 4.6
V
VO
Output Voltage
With respect to Vss
-0.5 ~ 4.6
V
IO
Output Current
50
mA
Pd
Power Dissipation
Ta=25°C
40
W
Topr
Operating Temperature
0~ 70
°C
Tstg
Storage Temperature
-45~ 100
°C

MH64S72QJA -8 Features

·Utilizes industry standard 32M X 4 Synchronous DRAMs in TSOP package , industry standard Resister in TSSOP package , and industry standard PLL in TSSOP package.
·Single 3.3V +/- 0.3V power supply
·LVTTL Interface
·4096 refresh cycles every 64ms

MH64S72QJA -8 Typical Application

Main memory unit for computers, Microcomputer memory.

MH64S72QJA -8 datasheet

MH64D64AKQH-10
PDF/DataSheet Download

  • Datasheet: MH64D64AKQH-10
  • File Size: 371523 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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    The MH64S72QJA is 67108864 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 32M x 4 Sy nchronous DRAMs in TSOP.The stacked structure of TSOP MH64S72QJAon a card edge dual inline package prov ides any ...

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