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MFG:N/A  Package Cooled:NA/  D/C:09+  

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Part Number: MIG50Q7CSB1X

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

 

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MIG50Q7CSB1X Maximum Ratings

Stage Characteristic Condition Symbol Ratings Unit
Inverter Supply voltage P-N power terminal VCC 900 V
Collector-emitter voltage - VCES 1200 V
Collector current Tc =25, DC IC 50 A
Forward current Tc = 25, DC IF 50 A
Collector power dissipation Tc = 25 PC 580 W
Junction temperature - Tj 150
Brake Supply voltage P-N power terminal VCC 900 V
Collector-emitter voltage - VCES 1200 V
Collector current Tc = 25, DC IC 40 A
Reverse voltage - VR 1200 V
Forward current Tc = 25°C, DC IF 40 A
Collector power dissipation Tc = 25°C PC 500 W
Junction temperature - Tj 150
Control Control supply voltage VD-GND terminal VD 20 V
Input voltage IN-GND terminal VIN 20 V
Fault output voltage FO-GND terminal VFO 20 V
Fault output current FO sink current IFO 14 mA
Module Operating temperature - Tc -20~+100
Storage temperature range - Tstg -40~+125
Isolation voltage AC 1 minute VISO 2500 V
Screw torque (terminal) M4 - 2 N`m
Screw torque (mounting) M5 - 3 N`m

MIG50Q7CSB1X Features

· Integrates inverter, brake power circuits and control circuits (IGBT drive units, protection units for short-circuit
current, over current, under voltage and over temperature) in one package.
· The electrodes are isolated from case.
· VCE (sat) = 2.2 V (typ.)
· UL recognized File No. E87989
· Weight: 278 g (typ.)

MIG50Q7CSB1X datasheet

MIG50Q7CSB1X
PDF/DataSheet Download

  • Datasheet: MIG50Q7CSB1X
  • File Size: 172792 KB
  • Manufacturer: TOSHIBA [Toshiba Semiconductor]
  • Click here to Download

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