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MJ11031

Application• High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc• Curves to 100 A (Pulsed)• Diode Protection to Rated IC• Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor• Junction Temperature to +200CSpecifications ...

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MJ11031: Application• High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc• Curves to 100 A (Pulsed)• Diode Protection to Rated IC• Monolithic Construct...

MJ11031 Data Sheet

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Part Number:
MJ11031
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/15

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Product Details

Description



Application

• High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor
• Junction Temperature to +200C




Specifications

Rating
Symbol
MJ11028
MJ11029
MJ11030
MJ11031
 MJ11032
MJ11033
Unit
CollectorEmitter Voltage
VCEO
60
90
120
Vdc
Collector Base Voltage
VCB
60
90
120
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Current - Continuous
Peak
IC
ICM
50
100
Adc
Base Current - Continuous
IB
2
Adc
Total Power Dissipation @ TC = 25
Derate above 25C @ TC = 100
PD
300
1.71
Watts
W/
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +200





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