MJ11032

Maximum Collector Cut-off Current :
Transistor Polarity : NPN
Mounting Style : Through Hole
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 120 V
Collector- Base Voltage VCBO : 120 V
Maximum DC Collector Current : 50 A
Power Dissipation : 0.3 W
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray


Application

• High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor
• Junction Temperature to +200
C




Specifications

Rating	Symbol	MJ11028 MJ11029	MJ11030 MJ11031	MJ11032 MJ11033	Unit
CollectorEmitter Voltage	VCEO	60	90	120	Vdc
Collector Base Voltage	VCB	60	90	120	Vdc
EmitterBase Voltage	VEB	5			Vdc
Collector Current - Continuous Peak	IC ICM	50 100			Adc
Base Current - Continuous	IB	2			Adc
Total Power Dissipation @ TC = 25 Derate above 25 C @ TC = 100	PD	300 1.71			Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +200

Parameters:

Technical/Catalog Information	MJ11032
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	120V
Current - Collector (Ic) (Max)	50A
Power - Max	300W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 25A, 5V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 250mA, 25A
Frequency - Transition	-
Current - Collector Cutoff (Max)	2mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJ11032 MJ11032 MJ11032OS ND MJ11032OSND MJ11032OS