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MJD18002D2T4

Transistors Bipolar (BJT) BIP NPN 2A 450V TR

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SeekIC No. : 00214290 Detail

MJD18002D2T4: Transistors Bipolar (BJT) BIP NPN 2A 450V TR

MJD18002D2T4 Data Sheet

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Part Number:
MJD18002D2T4
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 450 V
Emitter- Base Voltage VEBO : 11 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 14 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum DC Collector Current : 2 A
Collector- Emitter Voltage VCEO Max : 450 V
DC Collector/Base Gain hfe Min : 14
Emitter- Base Voltage VEBO : 11 V


Parameters:

Technical/Catalog InformationMJD18002D2T4
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)450V
Current - Collector (Ic) (Max)2A
Power - Max50W
DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 400mA, 1V
Vce Saturation (Max) @ Ib, Ic600mV @ 40mA, 400mA
Frequency - Transition13MHz
Current - Collector Cutoff (Max)100A
Mounting TypeSurface Mount
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
PackagingTape & Reel (TR)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJD18002D2T4
MJD18002D2T4



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